component
19N10L-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown19N10L-TN3-R
UTC(Unisonic Tech) · MOSFETs · TO-252
19N10L-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with a maximum gate-source voltage of ±25 V and RDS(ON) < 0.1 Ω specified at VGS=10 V. |
| 2 | D | passive | Drain; rated for VDSS of 100 V and continuous drain current of 15.6 A at TC=25°C. |
| 3 | S | passive | Source; body-diode continuous current is rated at 15.6 A and pulsed at 62.4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250µA | 4 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=100V, VGS=0V | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=100V, TJ=125°C | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=25V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-25V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.078 | 0.1 | Ω | VGS=10V, ID=7.8A | 4 | |
| Input Capacitance | CISS | 600 | 780 | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 | |
| Output Capacitance | COSS | 165 | 215 | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 32 | 40 | pF | VDS=25V, VGS=0V, f=1.0MHz | 4 | |
| Total Gate Charge | QG | 19 | 25 | nC | VDS=50V, ID=1.3A, VGS=10V | 4 | |
| Turn-ON Delay Time | tD(ON) | 45 | 60 | ns | VDD=30V, ID=0.5A, RG=25Ω | 4 | |
| Turn-ON Rise Time | tR | 70 | 90 | ns | VDD=30V, ID=0.5A, RG=25Ω | 4 | |
| Turn-OFF Delay Time | tD(OFF) | 165 | 250 | ns | VDD=30V, ID=0.5A, RG=25Ω | 4 | |
| Turn-OFF Fall-Time | tF | 78 | 90 | ns | VDD=30V, ID=0.5A, RG=25Ω | 4 | |
| Diode Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=15.6A | 4 | ||
| Maximum Body-Diode Continuous Current | IS | 15.6 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 62.4 | A | 4 | |||
| Drain-Source Voltage | VDSS | 100 | V | TC=25°C | 3 | ||
| Gate-Source Voltage | VGSS | -25 | 25 | V | TC=25°C | 3 | |
| Continuous Drain Current | ID | 15.6 | A | TC=25°C | 3 | ||
| Continuous Drain Current | ID | 9.8 | A | TC=100°C | 3 | ||
| Pulsed Drain Current | IDM | 62.4 | A | Pulse width limited by TJ(MAX) | 3 | ||
| Avalanche Current | IAR | 15.6 | A | Pulse width limited by TJ(MAX) | 3 | ||
| Single Pulsed Avalanche Energy | EAS | 220 | mJ | L=1.8mH, IAS=15.6A, VDD=25V, RG=25Ω, Starting TJ=25°C | 3 | ||
| Repetitive Avalanche Energy | EAR | 5 | mJ | Pulse width limited by TJ(MAX) | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 6 | V/ns | ISD≤19A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25°C | 3 | ||
| Power Dissipation | PD | 50 | W | TO-252 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Thermal Resistance Junction to Ambient | θJA | 50 | °C/W | TO-252 | 3 | ||
| Thermal Resistance Junction to Case | θJC | 2.5 | °C/W | TO-252 | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.1 | V/°C | ID=250µA, Referenced to 25°C | 4 | ||
| Forward Transconductance | gFS | 11 | S | VDS=40V, ID=7.8A (Note 1) | 4 | ||
| Gate Source Charge | QGS | 6 | nC | VDS=50V, ID=1.3A, VGS=10V | 4 | ||
| Gate Drain Charge | QGD | 6 | nC | VDS=50V, ID=1.3A, VGS=10V | 4 | ||
| Body Diode Reverse Recovery Time | tRR | 78 | ns | VGS=0V, IS=19A, dIF/dt=100A/µs | 4 | ||
| Body Diode Reverse Recovery Charge | QRR | 200 | nC | VGS=0V, IS=19A, dIF/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
19N10L-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
19n10l-tn3-r-etched.step/19n10l-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);19n10l-tn3-r.step/19n10l-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (8 pp, sha256
fd9a2d6ae7b4eb36, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).