# 18NM65L-TA3-T

**UTC Unisonic Tech** · MOSFETs · TO-220

18NM65L-TA3-T from UTC Unisonic Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 18NM65 N-channel super-junction MOSFET, as assigned in the datasheet pin assignment (G: Gate); the datasheet gives no gate voltage limit for this pin beyond the ±30 V VGSS absolute maximum rating. |
| 2 | D | passive | Drain terminal of the 18NM65 MOSFET, as assigned in the datasheet pin assignment (D: Drain); the datasheet rates the drain-source voltage VDSS at 650 V and continuous drain current ID at 18 A. |
| 3 | S | passive | Source terminal of the 18NM65 MOSFET, as assigned in the datasheet pin assignment (S: Source); the datasheet specifies the source-drain diode forward current IS at 18 A maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V | TC = 25°C | 3 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V | TC = 25°C | 3 |
| Drain Current Continuous | ID |  |  | 18 | A | TC = 25°C | 3 |
| Pulsed Drain Current | IDM |  |  | 36 | A | Note 2 (repetitive rating, pulse width limited by max junction temperature) | 3 |
| Avalanche Current | IAR |  |  | 2.9 | A | Note 2 | 3 |
| Avalanche Energy Single Pulsed | EAS |  |  | 151 | mJ | Note 3: L = 10mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C | 3 |
| Repetitive Avalanche Energy | EAR |  |  | 0.44 | mJ |  | 3 |
| Drain Source Voltage Slope | dv/dt |  |  | 12.9 | V/ns |  | 3 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 6 | V/ns | Note 4: ISD≤18A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C | 3 |
| Power Dissipation (TO-220) | PD |  |  | 104 | W | Package TO-220/TO-262/TO-263 | 3 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 3 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 3 |
| Junction to Ambient (TO-220) | θJA |  |  | 62.5 | °C/W | Package group TO-220/TO-220F | 3 |
| Junction to Case (TO-220) | θJC |  |  | 1.2 | °C/W | Package group TO-220/TO-262/TO-263 | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250µA | 4 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | µA | VDS=650V, VGS=0V | 4 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±30V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2.5 |  | 4.5 | V | VDS=VGS, ID=250µA | 4 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 0.28 | 0.33 | Ω | VGS=10V, ID=9.0A | 4 |
| Input Capacitance | CISS |  | 1115 |  | pF | VGS=0V, VDS=50V, f=1.0MHz | 4 |
| Output Capacitance | COSS |  | 134 |  | pF | VGS=0V, VDS=50V, f=1.0MHz | 4 |
| Reverse Transfer Capacitance | CRSS |  | 4.9 |  | pF | VGS=0V, VDS=50V, f=1.0MHz | 4 |
| Gate Resistance | RG |  | 5 |  | Ω | f =1MHz, Open Drain | 4 |
| Total Gate Charge | QG |  | 44 |  | nC | VDS=520V, VGS=10V, ID=18A, IG=1mA (Note 1, 2) | 4 |
| Gate Source Charge | QGS |  | 13 |  | nC | VDS=520V, VGS=10V, ID=18A, IG=1mA (Note 1, 2) | 4 |
| Gate Drain Charge | QGD |  | 17 |  | nC | VDS=520V, VGS=10V, ID=18A, IG=1mA (Note 1, 2) | 4 |
| Turn-ON Delay Time | tD(ON) |  | 18 |  | ns | VDS=100V, VGS=10V, ID=18A, RG=25Ω (Note 1, 2) | 4 |
| Turn-ON Rise Time | tR |  | 25 |  | ns | VDS=100V, VGS=10V, ID=18A, RG=25Ω (Note 1, 2) | 4 |
| Turn-OFF Delay Time | tD(OFF) |  | 50 |  | ns | VDS=100V, VGS=10V, ID=18A, RG=25Ω (Note 1, 2) | 4 |
| Turn-OFF Fall-Time | tF |  | 76 |  | ns | VDS=100V, VGS=10V, ID=18A, RG=25Ω (Note 1, 2) | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 18 | A |  | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 36 | A |  | 4 |
| Drain-Source Diode Forward Voltage | VSD |  | 1.5 |  | V | IF=IS, VGS=0V (Note 1) | 4 |
| Reverse Recovery Time | trr |  | 420 |  | ns | IS=18A, VGS=0V, dIF/dt=100A/µs | 4 |
| Reverse Recovery Charge | Qrr |  | 7 |  | µC |  | 4 |

## CAD (KiCad official)

- Symbol: `18NM65L-TA3-T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `18nm65l-ta3-t-etched.step` / `18nm65l-ta3-t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `18nm65l-ta3-t.step` / `18nm65l-ta3-t.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602845761985912832) (9 pp, sha256 `a2281bc0a6e6e576`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/18nm65l-ta3-t-datasheet.pdf)