component
18N50F
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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18N50F
HXY MOSFET · MOSFETs · TO-220F
18N50F from HXY MOSFET, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 18N50F; gate-to-source voltage is rated at ±30 V (VGSS) and the threshold is 2.0 V to 4.0 V at VDS=VGS, ID=250uA. |
| 2 | D | passive | Drain terminal; drain-to-source voltage is rated 500 V (VDSS) and continuous drain current is 18 A at Tc=25℃ (18 A at Tc=100℃ also listed). |
| 3 | S | passive | Source terminal; continuous source current is limited to 13 A (ISD) with pulsed source current of 52 A (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 500 | V | TJ=+25℃ to +150℃ (note 1) | 1 | ||
| Gate-to-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 18 | A | Tc=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 72 | A | VGS=10V (note 2) | 1 | ||
| Single Pulse Avalanche Energy | EAS | 710 | mJ | 1 | |||
| Power Dissipation | PD | 65 | W | 1 | |||
| Maximum Temperature for Soldering Leads | TL | 300 | ℃ | Leads at 0.063in (1.6mm) from case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering Package Body | TPAK | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating and Storage Temperature Range | TJ & TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.92 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-to-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=500V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 100 | uA | VDS=400V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VGS==30V, VDS=0V | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.3 | 0.38 | Ω | VGS=10V, ID=6.5A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Continuous Source Current | ISD | 13 | A | Integral pn-diode in MOSFET (note 2) | 2 | ||
| Pulsed Source Current | ISM | 52 | A | Pulse width≤380µs; duty cycle≤2% (note 2) | 2 | ||
| Diode Forward Voltage | VSD | 1.5 | V | IS=18A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
18N50F - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
0606d272681912f2, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 18N50F
**HXY MOSFET** · MOSFETs · TO-220F
18N50F from HXY MOSFET, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 18N50F; gate-to-source voltage is rated at ±30 V (VGSS) and the threshold is 2.0 V to 4.0 V at VDS=VGS, ID=250uA. |
| 2 | D | passive | Drain terminal; drain-to-source voltage is rated 500 V (VDSS) and continuous drain current is 18 A at Tc=25℃ (18 A at Tc=100℃ also listed). |
| 3 | S | passive | Source terminal; continuous source current is limited to 13 A (ISD) with pulsed source current of 52 A (ISM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 500 | V | TJ=+25℃ to +150℃ (note 1) | 1 |
| Gate-to-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 18 | A | Tc=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 72 | A | VGS=10V (note 2) | 1 |
| Single Pulse Avalanche Energy | EAS | | | 710 | mJ | | 1 |
| Power Dissipation | PD | | | 65 | W | | 1 |
| Maximum Temperature for Soldering Leads | TL | | | 300 | ℃ | Leads at 0.063in (1.6mm) from case for 10 seconds | 1 |
| Maximum Temperature for Soldering Package Body | TPAK | | | 260 | ℃ | Package body for 10 seconds | 1 |
| Operating and Storage Temperature Range | TJ & TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 1.92 | ℃/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62.5 | ℃/W | | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 500 | | | V | VGS=0V, ID=250uA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | uA | VDS=500V, VGS=0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 100 | uA | VDS=400V, VGS=0V, TJ=125℃ | 2 |
| Gate-to-Source Leakage Current | IGSS | | | 100 | nA | VGS==30V, VDS=0V | 2 |
| Gate-to-Source Leakage Current | IGSS | | | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 0.3 | 0.38 | Ω | VGS=10V, ID=6.5A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250uA | 2 |
| Continuous Source Current | ISD | | | 13 | A | Integral pn-diode in MOSFET (note 2) | 2 |
| Pulsed Source Current | ISM | | | 52 | A | Pulse width≤380µs; duty cycle≤2% (note 2) | 2 |
| Diode Forward Voltage | VSD | | | 1.5 | V | IS=18A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `18N50F`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/18n50f-datasheet.pdf) (5 pp, sha256 `0606d272681912f2`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/18n50f-datasheet.pdf)