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16N65

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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16N65

HXY MOSFET · MOSFETs · TO-263

16N65 from HXY MOSFET, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with VGS limited to ±30V and a threshold of 2.0V to 4.0V at ID=250uA.
2 D passive Drain of the N-channel MOSFET, rated 650V VDS and 16A continuous drain current (64A pulsed).
3 S passive Source of the N-channel MOSFET, with 16A continuous source current through the integral PN body diode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250uA 2
Drain-to-Source Leakage Current IDSS 1 uA VDS=650V, VGS=0V 2
Drain-to-Source Leakage Current (hot) IDSS 100 uA VDS=520V, VGS=0V, TJ=125°C 2
Gate-to-Source Leakage Current (forward) IGSS 100 nA VGS=+30V, VDS=0V 2
Gate-to-Source Leakage Current (reverse) IGSS -100 nA VGS=-30V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(ON) 0.45 0.55 Ω VGS=10V, ID=8A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Continuous Source Current ISD 16 A Integral PN-diode in MOSFET 2
Pulsed Source Current ISM 64 A Integral PN-diode in MOSFET 2
Diode Forward Voltage VSD 1.5 V S=16A, VGS=0V 2
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Drain Current-Continuous ID 16 A 1
Drain Current-Pulsed IDM 64 A 1
Maximum Power Dissipation PD 180 W TC = 25°C 1
Power Derating above 25°C 1.1 W/°C Derate above 25°C 1
Operating and Store Temperature Range TJ, Tstg -55 175 °C 1
Single Pulsed Avalanche Energy EAS 1000 mJ 1
Single Pulsed Avalanche Current IAS 64 A 1
Thermal Resistance, Junction-to-Case RθJC 0.69 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W 1
Forward Transconductance gfs 15 S VDS=15V,ID=8A 2
Input Capacitance Ciss 2442 pF VGS=0V, VDS=25V, f=1.0MHZ 2
Output Capacitance Coss 218 pF VGS=0V, VDS=25V, f=1.0MHZ 2
Reverse Transfer Capacitance Crss 18.5 pF VGS=0V, VDS=25V, f=1.0MHZ 2
Total Gate Charge Qg 54 nC VDD=325V, ID=16A, VGS=0 to 10V 2
Gate-to-Source Charge Qgs 12 nC VDD=325V, ID=16A, VGS=0 to 10V 2
Gate-to-Drain (Miller) Charge Qgd 21 nC VDD=325V, ID=16A, VGS=0 to 10V 2
Turn-on Delay Time td(ON) 15 nS VDD=325V, ID=16A, VGS=10V, RG=6.1Ω 2
Rise Time trise 52 nS VDD=325V, ID=16A, VGS=10V, RG=6.1Ω 2
Turn-Off Delay Time td(OFF) 59 nS VDD=325V, ID=16A, VGS=10V, RG=6.1Ω 2
Fall Time tfall 72 nS VDD=325V, ID=16A, VGS=10V, RG=6.1Ω 2
Reverse recovery charge Qrr 2.6 uC VGS=0V, IF=16A, diF/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: 16N65
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: 16n65-etched.step / 16n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 16n65.step / 16n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 b0e23dee83c7fc98, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF