component

15N10L-TN3-R

Public Made by Adom

by adom

UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors15n10l-tn3-rfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
15n10l-tn3-r / README.md
History Download
Ray Publish 0.1.0 af5c3ca 4d ago

15N10L-TN3-R

UTC Unisonic Tech · MOSFETs · TO-252

15N10L-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet rates gate-source voltage VGSS at ±20 V.
2 D passive Drain of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 100 V and continuous drain current ID at 14.7 A (TC=25°C).
3 S passive Source of the N-channel MOSFET; the datasheet gives the body-diode forward voltage VSD as 0.9 V typical and 1.2 V maximum at IS=8 A, VGS=0 V.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 14.7 A TC=25°C, TJ=150°C 2
Continuous Drain Current ID 13.6 A TC=70°C, TJ=150°C 2
Pulsed Drain Current IDM 59 A 2
Power Dissipation PD 34.7 W TC=25°C 2
Power Dissipation PD 22.2 W TC=70°C 2
Operating Junction Temperature TJ -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 100 V ID=250µA, VGS=0V 2
Drain-Source Leakage Current IDSS 1 µA VDS=80V, VGS=0V 2
Gate-Source Leakage Current IGSS 100 nA VGS=+20V, VDS=0V 2
Gate-Source Leakage Current IGSS -100 nA VGS=-20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 1 3 V VDS=VGS, ID=250µA 2
Drain-Source On-State Resistance RDS(ON) 80 100 mΩ VGS=10V, ID=8A 2
Drain-Source Diode Forward Voltage VSD 0.9 1.2 V IS=8A, VGS=0V 2
Junction to Case Thermal Resistance θJC 3.6 °C/W Device mounted on 1in2 FR4 board with 2 oz copper 2

CAD (KiCad official)

  • Symbol: 15N10L-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 15n10l-tn3-r-etched.step / 15n10l-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 15n10l-tn3-r.step / 15n10l-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256 ab397410d8a358d2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF