component
12TQ200
Public Made by Adomby adom
SMC(Sangdest Microelectronicstronic (Nanjing)) Schottky Barrier Diodes (SBD), TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| 12tq200-etched.glb | 1d ago |
| 12tq200-etched.step | 1d ago |
| 12tq200-hero.glb | 1d ago |
| 12tq200-hero.overlay.json | 1d ago |
| 12tq200.glb | 1d ago |
| 12tq200.kicad_mod | 1d ago |
| 12tq200.kicad_sym | 1d ago |
| 12tq200.lbr | 1d ago |
| 12tq200.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
12TQ200
SMC(Sangdest Microelectronicstronic (Nanjing)) · Schottky Barrier Diodes (SBD) · TO-220-2
12TQ200 from SMC(Sangdest Microelectronicstronic (Nanjing)), in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the Schottky rectifier, rated for 200 V peak repetitive reverse voltage and 15 A average forward current at Tc=136°C. |
| 2 | Anode | passive | Anode of the Schottky rectifier, with forward voltage drop of 0.92 V max at 15 A and TJ = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SMC(Sangdest Microelectronicstronic (Nanjing)) |
| Package | TO-220-2 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM/VRWM/VR | 200 | V | 1 | |||
| Average Rectified Forward Current | IF(AV) | 15 | A | 50% duty cycle @Tc=136°C, rectangular wave form | 1 | ||
| Peak One Cycle Non-Repetitive Surge Current | IFSM | 276 | A | 8.3ms, Half Sine pulse | 1 | ||
| Junction Temperature | TJ | -55 | 175 | C | 2 | ||
| Storage Temperature | Tstg | -55 | 175 | C | 2 | ||
| Forward Voltage Drop | VF1 | 0.9 | 0.92 | V | @ 15A, Pulse, TJ = 25 C | 2 | |
| Forward Voltage Drop | VF2 | 0.74 | 0.76 | V | @ 15A, Pulse, TJ = 125 C | 2 | |
| Reverse Current | IR1 | 0.0002 | 0.55 | mA | @VR = rated VR TJ = 25 ℃ | 2 | |
| Reverse Current | IR2 | 0.1 | 7 | mA | @VR = rated VR TJ = 125 ℃ | 2 | |
| Junction Capacitance | CT | 250 | 300 | pF | @VR = 5V, TC = 25 ℃, fSIG = 1MHz | 2 | |
| Voltage Rate of Change | dv/dt | 10000 | V/μs | 2 | |||
| Typical Thermal Resistance Junction to Case | RJC | 2 | C/W | DC operation | 2 | ||
| Typical Thermal Resistance Case to Heat Sink | RCS | 0.5 | C/W | Mounting surface, smooth and greased (only for TO-220) | 2 | ||
| Series Inductance | LS | 8 | nH | Measured lead to lead 5 mm from package body | 2 |
CAD (KiCad official)
- Symbol:
12TQ200 - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
12tq200-etched.step/12tq200-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);12tq200.step/12tq200.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SMC(Sangdest Microelectronicstronic (Nanjing)) datasheet (6 pp, sha256
05dc534a692a160d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).