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12P10-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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12P10-VB

VBsemi Elec · MOSFETs · TO-252

12P10-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1 V to -2.5 V at ID = -250 µA.
2 D passive Drain, connected to the tab; drain-source voltage rating is -100 V and continuous drain current is -8.8 A at TC = 25 °C.
3 S passive Source; continuous body-diode current is -8.8 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID -8.8 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -7.1 A TC = 70 °C, TJ = 150 °C 1
Pulsed Drain Current IDM -25 A TC = 25 °C 1
Avalanche Current IAS -18 A TC = 25 °C 1
Single Avalanche Energy EAS 16.2 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 32.1 W TC = 25 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 50 °C/W Mounted on 1" square PCB (FR-4) 1
Junction-to-Case (Drain) RthJC 3.9 °C/W 1
Drain-Source Breakdown Voltage VDS -100 V VDS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage VGS(th) -2.5 -1 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = - 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = - 100 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -15 A VDS ≤ - 10 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.25 Ω VGS = - 10 V, ID = - 3.6 A 2
Drain-Source On-State Resistance RDS(on) 0.28 Ω VGS = - 4.5 V, ID = - 3.4 A 2
Forward Transconductance gfs 12 S VDS = - 15 V, ID = - 3.6 A 2
Total Gate Charge Qg 23.2 34.8 nC VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A 2
Total Gate Charge Qg 11.7 17.6 nC VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A 2
Gate Resistance Rg 1.2 5.7 11.5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 7 14 ns VDD = - 50 V, RL = 17.2 Ω, ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 12 18 ns VDD = - 50 V, RL = 17.2 Ω, ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 33 50 ns VDD = - 50 V, RL = 17.2 Ω, ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = - 50 V, RL = 17.2 Ω, ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω 2
Continuous Source Current IS -8.8 A TC = 25 °C 2
Pulsed Source Current ISM -15 A TC = 25 °C 2
Forward Voltage VSD -0.8 -1.5 V IF = - 2.9 A, VGS = 0 V 2
Reverse Recovery Time trr 50 75 ns IF = - 2.9 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) -4 -6 A IF = - 2.9 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 98 147 nC IF = - 2.9 A, dI/dt = 100 A/µs 2
Input Capacitance Ciss 1055 pF VGS = 0 V, VDS = - 50 V, f = 1 MHz 2
Output Capacitance Coss 65 pF VGS = 0 V, VDS = - 50 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 41 pF VGS = 0 V, VDS = - 50 V, f = 1 MHz 2
Gate-Source Charge Qgs 3.5 nC VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A 2
Gate-Drain Charge Qgd 4.8 nC VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A 2

CAD (KiCad official)

  • Symbol: 12P10-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 12p10-vb-etched.step / 12p10-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 12p10-vb.step / 12p10-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 d7075ab921418be5, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF