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12N10-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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12N10-VB

VBsemi Elec · MOSFETs · TO-252

12N10-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS), and VGS = 10 V is the condition used for the specified RDS(on).
2 D passive Drain of the N-channel MOSFET, rated for 100 V drain-source voltage (VDS) and also the thermal path to the case (RthJC is specified junction-to-case (drain)).
3 S passive Source of the N-channel MOSFET; continuous source (diode conduction) current IS is rated at 3 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 13 A TJ = 175 °C, TC = 125 °C 1
Pulsed Drain Current IDM 40 A 1
Continuous Source Current (Diode Conduction) IS 3 A 1
Avalanche Current IAS 3 A 1
Single Pulse Avalanche Energy EAS 18 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 96 W TC = 25 °C 1
Maximum Power Dissipation PD 3 W TA = 25 °C, surface mounted on 1in x 1in FR4 board (note a) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 15 18 °C/W t = 10 s 1
Junction-to-Ambient Thermal Resistance RthJA 40 50 °C/W Steady State 1
Junction-to-Case (Drain) Thermal Resistance RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 40 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.114 0.12 Ω VGS = 10 V, ID = 3 A, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.14 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Total Gate Charge Qg 24 41 nC VDS = 50 V, VGS = 10 V, ID = 3 A 2
Gate Resistance Rg 0.5 2.9 Ω 2
Rise Time tr 50 75 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 60 90 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Pulsed Current ISM 5 A 2
Diode Forward Voltage VSD 0.9 1.5 V IF = 3 A, VGS = 0 V 2
Source-Drain Reverse Recovery Time trr 180 250 ns IF = 3 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: 12N10-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 12n10-vb-etched.step / 12n10-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 12n10-vb.step / 12n10-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 c03c8a25d9492412, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF