π120E30

{
 "schema": "adom.pads/1",
 "slug": "120e30",
 "footprint": "SOIC-8_3.9x4.9mm_P1.27mm",
 "generated_from": {
  "footprint": "SOIC-8_3.9x4.9mm_P1.27mm@sha256:074ecb2092b24fa4",
  "pins": "page.json:component.pins",
  "overrides": null
 },
 "pin1": {
  "pad": "1",
  "at": [
   -2.475,
   -1.905
  ],
  "corner": "top-left",
  "source": "silk-marker",
  "derived_from": "SOIC-8_3.9x4.9mm_P1.27mm@sha256:074ecb2092b24fa4"
 },
 "pad_count": 8,
 "symbol_pins": [
  "1",
  "2",
  "3",
  "4",
  "5",
  "6",
  "7",
  "8"
 ],
 "paste_apertures": 0,
 "issues": [],
 "pads": [
  {
   "pad": "1",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -2.475,
    -1.905
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "1",
   "name": "VDD1",
   "type": "power_in",
   "description": "Supply voltage for isolator Side 1. 3.0 V to 5.5 V operating range; 2.75 V typical undervoltage lockout rising threshold. Bypass to GND1 with 0.1 µF-10 µF low-ESR ceramic close to the pin.",
   "is_pin1": true,
   "source": {
    "geometry": "SOIC-8_3.9x4.9mm_P1.27mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "2",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -2.475,
    -0.635
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "2",
   "name": "VIA",
   "type": "input",
   "description": "Logic input for channel A (Side 1). CMOS input, VIH ≥ 0.7·VDD1, VIL ≤ 0.3·VDD1. Absolute max −0.5 V to VDD1 + 0.5 V. Drives isolated logic output VOA on Side 2.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8_3.9x4.9mm_P1.27mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "3",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -2.475,
    0.635
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "3",
   "name": "VIB",
   "type": "input",
   "description": "Logic input for channel B (Side 1). CMOS input, VIH ≥ 0.7·VDD1, VIL ≤ 0.3·VDD1. Drives isolated logic output VOB on Side 2. Both π120 channels are forward (Side 1 → Side 2).",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8_3.9x4.9mm_P1.27mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "4",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    -2.475,
    1.905
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "4",
   "name": "GND1",
   "type": "power_in",
   "description": "Ground reference for isolator Side 1. Return for VDD1 bypass and for VIA/VIB input signals. Isolated from GND2 across the on-die iDivider capacitive barrier.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8_3.9x4.9mm_P1.27mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "5",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    2.475,
    1.905
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "5",
   "name": "GND2",
   "type": "power_in",
   "description": "Ground reference for isolator Side 2. Return for VDD2 bypass and for VOA/VOB output signals. Isolated from GND1 (3.0 kVrms withstand for the E3x variant).",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8_3.9x4.9mm_P1.27mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "6",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    2.475,
    0.635
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "6",
   "name": "VOB",
   "type": "output",
   "description": "Logic output for channel B (Side 2), mirrors VIB across the isolation barrier. Push-pull CMOS output rated ±10 mA absolute max, recommended ±6 mA. Fail-safe LOW when VDD1 unpowered (E30 suffix).",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8_3.9x4.9mm_P1.27mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "7",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    2.475,
    -0.635
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "7",
   "name": "VOA",
   "type": "output",
   "description": "Logic output for channel A (Side 2), mirrors VIA across the isolation barrier. Push-pull CMOS output rated ±10 mA absolute max, recommended ±6 mA. Fail-safe LOW when VDD1 unpowered (E30 suffix).",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8_3.9x4.9mm_P1.27mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "8",
   "kind": "smd",
   "shape": "roundrect",
   "at": [
    2.475,
    -1.905
   ],
   "rot": 0.0,
   "size": [
    1.95,
    0.6
   ],
   "layers": [
    "F.Cu",
    "F.Mask",
    "F.Paste"
   ],
   "thermal": false,
   "pin": "8",
   "name": "VDD2",
   "type": "power_in",
   "description": "Supply voltage for isolator Side 2. 3.0 V to 5.5 V; independent of VDD1 so this pin performs the 3 V ↔ 5 V level translation. Bypass to GND2 with 0.1 µF-10 µF low-ESR ceramic close to the pin.",
   "is_pin1": false,
   "source": {
    "geometry": "SOIC-8_3.9x4.9mm_P1.27mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  }
 ]
}