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11N10

Public Made by Adom

by adom

GOFORD MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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11N10

GOFORD · MOSFETs · TO-220

11N10 from GOFORD, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(TH) of 2 V min to 4 V max at VDS=10V, ID=250uA.
2 D passive Drain (also connected to the tab); VDSS 100 V and continuous drain current 110 A at TC=25℃.
3 S passive Source; body diode forward current IS is 110 A maximum.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 100 113 V VGS=0, ID=250uA 2
Gate-to-Source Forward Leakage IGSS 100 nA VDS=0V, VGS=±20V 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=100V, VGS=0V 2
Static Drain-to-Source On-Resistance RDS(ON) 7.8 9 mΩ VGS=10V,ID=40A 2
Gate Threshold Voltage VGS(TH) 2 3 4 V VDS=10V, ID=250uA 2
Forward Transconductance Gfs 90 S VDS=25V, ID=57A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=40A 3
Diode Forward Current IS 110 A 3
Drain-to-Source Voltage VDSS 100 V TC=25℃ 2
Continuous Drain Current ID 110 A TC=25℃ 2
Drain Current-Continuous ID (100℃) 78 A TC=100℃ 2
Pulsed Drain Current IDM 440 A @VG=10V 2
Power Dissipation PD 220 W TC=25℃ 2
Derating Factor above 25℃ 1.47 W/℃ 2
Gate-to-Source Voltage VGS -20 20 V TC=25℃ 2
Single Pulse Avalanche Energy EAS 1100 mJ Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 ℃ 2
Junction-to-Case Thermal Resistance RθJC 0.68 ℃/W Water cooled heatsink, PD adjusted for a peak junction temperature of +175℃ 2
Input Capacitance Ciss 6500 pF VDS=25V,VGS=0V, f=1.0MHZ 3
Output Capacitance Coss 380 pF VDS=25V,VGS=0V, f=1.0MHZ 3
Reverse Transfer Capacitance Crss 330 pF VDS=25V,VGS=0V, f=1.0MHZ 3
Total Gate Charge Qg 163 nC VDS=30V, VGS=10V, ID=30A 3
Gate-to-Source Charge Qgs 31 nC VDS=30V, VGS=10V, ID=30A 3
Gate-to-Drain (Miller) Charge Qgd 64 nC VDS=30V, VGS=10V, ID=30A 3
Turn-on Delay Time Td(ON) 26 ns VDD=30V,ID=2A, RL=15Ω, VGS=10V,RG=2.5Ω 3
Rise Time Trise 24 ns VDD=30V,ID=2A, RL=15Ω, VGS=10V,RG=2.5Ω 3
Turn-Off Delay Time Td(OFF) 91 ns VDD=30V,ID=2A, RL=15Ω, VGS=10V,RG=2.5Ω 3
Fall Time Tfall 39 ns VDD=30V,ID=2A, RL=15Ω, VGS=10V,RG=2.5Ω 3
Reverse Recovery Time trr 42 nS TJ=25℃,IF=40A, Di/dt = 100 A/µs 3
Reverse Recovery Charge Qrr 66 nC TJ=25℃,IF=40A, Di/dt = 100 A/µs 3

CAD (KiCad official)

  • Symbol: 11N10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: 11n10-etched.step / 11n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 11n10.step / 11n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 cc2d1221a71d9f09, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF