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118N10NS-VB

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VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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118N10NS-VB

VBsemi Elec · MOSFETs · DFN5x6-8

118N10NS-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, pin 1 marked by the dot on the package (VDS rated 100 V).
2 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 2.
4 G input Gate terminal of the N-channel MOSFET, with a gate-source voltage limit of ±20 V.
5 D passive Drain terminal, tied with pins 6, 7 and 8, with a continuous current of 65 A at TC = 25 °C.
6 D passive Drain terminal, tied with pins 5, 7 and 8, with a drain-source voltage rating of 100 V.
7 D passive Drain terminal, tied with pins 5, 6 and 8, with a pulsed drain current of 180 A (t = 100 µs).
8 D passive Drain terminal, tied with pins 5, 6 and 7, with a drain-source voltage rating of 100 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 3 5 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 100 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 15 μA VDS = 100 V, VGS = 0 V, TJ = 70 °C 2
On-state drain current ID(on) 40 A VDS ≥ 10 V, VGS = 10 V 2
Gate resistance Rg 0.2 0.76 1.4 Ω f = 1 MHz 2
Turn-on delay time td(on) 12 24 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise time tr 5 10 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 19 38 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall time tf 5 10 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-on delay time td(on) 15 30 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω 2
Rise time tr 6 12 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω 2
Pulse diode forward current ISM 80 A 2
Body diode voltage VSD 0.78 1.1 V IS = 5 A, VGS = 0 V 2
Body diode reverse recovery time trr 43 86 ns IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 72 144 nC IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Drain-source voltage VDS 100 V TA = 25 °C 1
Gate-source voltage VGS -20 20 V TA = 25 °C 1
Continuous drain current ID 65 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID 60 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID 20 A TJ = 150 °C, TA = 25 °C, b, c 1
Continuous drain current ID 18.5 A TJ = 150 °C, TA = 70 °C, b, c 1
Pulsed drain current IDM 180 A t = 100 μs 1
Continuous source-drain diode current IS 60 A TC = 25 °C 1
Continuous source-drain diode current IS 4.8 A TA = 25 °C, b, c 1
Single pulse avalanche current IAS 30 A L = 0.1 mH 1
Single pulse avalanche energy EAS 40 mJ L = 0.1 mH 1
Maximum power dissipation PD 80 W TC = 25 °C 1
Maximum power dissipation PD 50 W TC = 70 °C 1
Maximum power dissipation PD 5 W TA = 25 °C, b, c 1
Maximum power dissipation PD 3.2 W TA = 70 °C, b, c 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering peak temperature 260 °C c 1
Maximum junction-to-ambient RthJA 20 25 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 1
Maximum junction-to-case (drain) RthJC 1.6 2 °C/W Steady state 1
VDS temperature coefficient ΔVDS/TJ 81 mV/°C ID = 10 mA 2
VGS(th) temperature coefficient ΔVGS(th)/TJ -7.5 mV/°C ID = 250 μA 2
Drain-source on-state resistance RDS(on) 0.009 Ω VGS = 10 V, ID = 10 A 2
Drain-source on-state resistance RDS(on) 0.012 Ω VGS = 7.5 V, ID = 10 A 2
Forward transconductance gfs 46 S VDS = 15 V, ID = 10 A 2
Input capacitance Ciss 3970 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 132 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Reverse transfer capacitance Crss 11.2 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Gate-source charge Qgs 6.45 nC VDS = 50 V, VGS = 10 V, ID = 10 A 2
Gate-drain charge Qgd 3.5 nC VDS = 50 V, VGS = 10 V, ID = 10 A 2

CAD (KiCad official)

  • Symbol: 118N10NS-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: 118n10ns-vb-etched.step / 118n10ns-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 118n10ns-vb.step / 118n10ns-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 74d32d8e5aa86f2d, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF