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10N65F

Public Made by Adom

by adom

GOODWORK MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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10N65F

GOODWORK · MOSFETs · ITO-220AB-3

10N65F from GOODWORK, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel enhancement-mode MOSFET; gate-source voltage is rated at VGSS ±30 V.
2 Drain passive Drain of the MOSFET; rated for a drain-source voltage VDSS of 650 V and a continuous drain current ID of 10 A.
3 Source passive Source of the MOSFET; the reference terminal for the gate-source voltage rating of ±30 V.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package ITO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Avalanche Current (Note 2) IAR 10 A 1
Drain Current Continuous ID 10 A 1
Pulsed Drain Current (Note 2) IDM 38 A 1
Avalanche Energy Single Pulsed (Note 3) EAS 700 mJ Single pulsed (Note 3) 1
Avalanche Energy Repetitive (Note 2) EAR 15.6 mJ Repetitive (Note 2) 1
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Note 4 1
Power Dissipation PD 50 W 1
Junction Temperature TJ 150 °C 1
Operating Temperature TOPR -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 1 µA VDS = 650V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 0.87 1.2 Ω VGS = 10V, ID = 5.0A 2
Input Capacitance CISS 1570 2040 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Output Capacitance COSS 166 215 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Reverse Transfer Capacitance CRSS 18 24 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Turn-On Delay Time tD(ON) 23 55 ns VDD=325V, ID=10A, RG=25Ω (Note 1, 2) 2
Turn-On Rise Time tR 69 150 ns VDD=325V, ID=10A, RG=25Ω (Note 1, 2) 2
Turn-Off Delay Time tD(OFF) 144 300 ns VDD=325V, ID=10A, RG=25Ω (Note 1, 2) 2
Turn-Off Fall Time tF 77 165 ns VDD=325V, ID=10A, RG=25Ω (Note 1, 2) 2
Total Gate Charge QG 44 57 nC VDS=520V, ID=10A, VGS=10 V (Note 1, 2) 2
Maximum Continuous Drain-Source Diode Forward Current IS 10 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 10A 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.7 V/°C ID = 250 µA, Referenced to 25°C 2
Gate-Source Charge QGS 6.7 nC 2
Gate-Drain Charge QGD 18.5 nC 2
Reverse Recovery Time trr 420 ns VGS = 0 V, IS = 10A, dIF/dt = 100 A/µs (Note 1) 2
Reverse Recovery Charge QRR 4.2 µC VGS = 0 V, IS = 10A, dIF/dt = 100 A/µs (Note 1) 2
Thermal Resistance Junction-to-Case (max) ZθJC 2.5 D/W 4

CAD (KiCad official)

  • Symbol: 10N65F
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (5 pp, sha256 0df1800fdce4f4e9, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF