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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

10MQ100N

LGE · Schottky Barrier Diodes (SBD) · DO-214AC(SMA)

10MQ100N from LGE, in a DO-214AC(SMA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	K	passive	Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2	A	passive	Anode.

Key specifications

Parameter	Value
Manufacturer	LGE
Package	DO-214AC(SMA)
Category	Diodes
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Maximum DC reverse voltage	VR			100	V		1
Repetitive peak reverse voltage	VRRM			100	V		1
Maximum average forward current	IF(AV)			1.5	A	50 % duty cycle at TL = 126 °C, rectangular waveform, on PC board 9 mm2 island	1
Average forward current (DC)	IF(AV)			2.1	A	DC	1
Maximum peak one cycle non-repetitive surge current	IFSM			120	A	5 µs sine or 3 µs rect. pulse, TJ = 25 °C, following any rated load condition and with rated VRRM applied	1
Maximum peak one cycle non-repetitive surge current	IFSM			30	A	10 ms sine or 6 ms rect. pulse, TJ = 25 °C, following any rated load condition and with rated VRRM applied	1
Non-repetitive avalanche energy	EAS			1	mJ	TJ = 25 °C, IAS = 0.5 A, L = 8 mH	1
Repetitive avalanche current	IAR			0.5	A		1
Junction temperature range	TJ	-55		150	°C		1
Maximum junction and storage temperature range	TJ, TStg	-55		150	°C		2
Maximum forward voltage drop	VFM			0.78	V	1 A, TJ = 25 °C	2
Maximum forward voltage drop	VFM			0.85	V	1.5 A, TJ = 25 °C	2
Maximum forward voltage drop	VFM			0.63	V	1 A, TJ = 125 °C	2
Maximum forward voltage drop	VFM			0.68	V	1.5 A, TJ = 125 °C	2
Maximum reverse leakage current	IRM			0.1	mA	TJ = 25 °C, VR = Rated VR	2
Maximum reverse leakage current	IRM			1	mA	TJ = 125 °C, VR = Rated VR	2
Threshold voltage	VF(TO)			0.52	V	TJ = TJ maximum	2
Forward slope resistance	rt			78.4	mΩ	TJ = TJ maximum	2
Maximum voltage rate of change	dV/dt			10000	V/µs	Rated VR	2
Maximum thermal resistance, junction to ambient	RthJA			80	°C/W	DC operation	2
Typical junction capacitance	CT		38		pF	VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz	2
Typical series inductance	LS		2		nH	Measured lead to lead 5 mm from package body	2

CAD (KiCad official)

Symbol: 10MQ100N
Footprint: Diode_SMD:D_SMA
3D model: DO-214AC(SMA) (KiCad packages3D, STEP)
3D model files: 10mq100n-etched.step / 10mq100n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 10mq100n.step / 10mq100n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: LGE datasheet (3 pp, sha256 419a7afcde7e8acc, retrieved 2026-10-22, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF