# 10G10S

**HL** · MOSFETs · SOP-8

10G10S from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal, listed with pin 3 under the 'S' column of the SOP-8 pin assignment; the datasheet gives source current limits of IS 10 A (N-channel) and -5 A (P-channel) but does not state which channel this pin belongs to. |
| 2 | G | input | Gate terminal, listed with pin 4 under the 'G' column; gate-source voltage is rated ±20 V for both channels. |
| 3 | S | passive | Source terminal, listed with pin 1 under the 'S' column of the SOP-8 pin assignment; the datasheet gives source current limits of IS 10 A (N-channel) and -5 A (P-channel) but does not state which channel this pin belongs to. |
| 4 | G | input | Gate terminal, listed with pin 2 under the 'G' column; gate-source voltage is rated ±20 V for both channels. |
| 5 | D | passive | Drain terminal, listed with pins 6, 7 and 8 under the 'D' column; drain-source voltage is rated 100 V (N-channel) and -100 V (P-channel). |
| 6 | D | passive | Drain terminal, listed with pins 5, 7 and 8 under the 'D' column; drain-source voltage is rated 100 V (N-channel) and -100 V (P-channel). |
| 7 | D | passive | Drain terminal, listed with pins 5, 6 and 8 under the 'D' column; drain-source voltage is rated 100 V (N-channel) and -100 V (P-channel). |
| 8 | D | passive | Drain terminal, listed with pins 5, 6 and 7 under the 'D' column; drain-source voltage is rated 100 V (N-channel) and -100 V (P-channel). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Channel Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| P-Channel Drain-Source Voltage | VDS | -100 |  |  | V |  | 1 |
| N-Channel Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| P-Channel Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| N-Channel Continuous Drain Current | ID |  |  | 10 | A | Tc=25℃, VGS@10V | 1 |
| P-Channel Continuous Drain Current | ID | -5 |  |  | A | Tc=25℃, VGS@10V | 1 |
| N-Channel Continuous Drain Current | ID |  |  | 6 | A | Tc=70℃, VGS@10V | 1 |
| P-Channel Continuous Drain Current | ID | -3.5 |  |  | A | Tc=70℃, VGS@10V | 1 |
| N-Channel Pulsed Drain Current | IDM |  |  | 25 | A |  | 1 |
| P-Channel Pulsed Drain Current | IDM | -9.5 |  |  | A |  | 1 |
| N-Channel Single Pulsed Avalanche Energy | EAS |  |  | 22.5 | mJ |  | 1 |
| P-Channel Single Pulsed Avalanche Energy | EAS |  |  | 35.3 | mJ |  | 1 |
| N-Channel Avalanche Current | IAS |  |  | 22.6 | A |  | 1 |
| P-Channel Avalanche Current | IAS | -22.6 |  |  | A |  | 1 |
| N-Channel Total Power Dissipation | PD |  |  | 2.5 | W | Tc=25℃ | 1 |
| P-Channel Total Power Dissipation | PD |  |  | 2.5 | W | Tc=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 85 | ℃/W |  | 2 |
| Thermal Resistance Junction-Case | RθJC |  |  | 62.5 | ℃/W |  | 2 |
| N-Channel Drain-Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | VGS=0V,ID=250uA | 2 |
| N-Channel Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=100V,VGS=0V | 2 |
| N-Channel Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V,VGS=±20V | 2 |
| N-Channel Gate Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VGS=VDS,ID=250uA | 2 |
| N-Channel Static Drain-Source On-Resistance | RDS(ON) |  | 70 | 90 | mΩ | VGS=10V,ID=5A | 2 |
| N-Channel Static Drain-Source On-Resistance | RDS(ON) |  | 75 | 105 | mΩ | VGS=4.5V,ID=3A | 2 |
| N-Channel Diode Forward Voltage | VSD |  |  | 1.2 | V | IS=1A,VGS=0V | 2 |
| N-Channel Continuous Source Current | IS |  |  | 10 | A |  | 2 |
| P-Channel Drain-Source Breakdown Voltage | V(BR)DSS | -100 |  |  | V | VGS=0V,ID=-250uA | 3 |
| P-Channel Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS=-80V,VGS=0V | 3 |
| P-Channel Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V,VGS=±20V | 3 |
| P-Channel Gate Threshold Voltage | VGS(th) | -1.2 |  | -2.5 | V | VGS=VDS,ID=-250uA | 3 |
| P-Channel Static Drain-Source On-Resistance | RDS(ON) |  | 180 | 220 | mΩ | VGS=-10V,ID=-3A | 3 |
| P-Channel Static Drain-Source On-Resistance | RDS(ON) |  | 210 | 255 | mΩ | VGS=-4.5V,ID=-2A | 3 |
| P-Channel Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V,IS=-1A,TJ=25℃ | 3 |
| P-Channel Continuous Source Current | IS |  |  | -5 | A | VG=VD=0V,Force Current | 3 |

## CAD (KiCad official)

- Symbol: `10G10S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `10g10s-etched.step` / `10g10s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `10g10s.step` / `10g10s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HL datasheet](docs/10g10s-datasheet.pdf) (9 pp, sha256 `ca791fc6644b5c1e`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/10g10s-datasheet.pdf)