# 10G04S

**HL** · MOSFETs · SOP-8

10G04S from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal S1 per the ordering-table pin assignment; the datasheet gives no separate pin-level limit, so the device ratings apply (VDS 40 V / -40 V, ID 10 A / -10 A at Ta=25°C). |
| 2 | G1 | input | Gate terminal G1 per the ordering-table pin assignment; gate-source voltage is rated ±20 V for both channels. |
| 3 | S2 | passive | Source terminal S2 per the ordering-table pin assignment; the datasheet gives no separate pin-level limit, so the device ratings apply (VDS 40 V / -40 V, ID 10 A / -10 A at Ta=25°C). |
| 4 | G2 | input | Gate terminal G2 per the ordering-table pin assignment; gate-source voltage is rated ±20 V for both channels. |
| 5 | D2 | passive | Drain terminal D2 (pins 5 and 6 are both D2); the datasheet rates drain-source voltage at 40 V (N-channel) and -40 V (P-channel), with continuous drain current 10 A and -10 A at Ta=25°C. |
| 6 | D2 | passive | Drain terminal D2 (pins 5 and 6 are both D2); the datasheet rates drain-source voltage at 40 V (N-channel) and -40 V (P-channel), with continuous drain current 10 A and -10 A at Ta=25°C. |
| 7 | D1 | passive | Drain terminal D1 (pins 7 and 8 are both D1); the datasheet rates drain-source voltage at 40 V (N-channel) and -40 V (P-channel), with continuous drain current 10 A and -10 A at Ta=25°C. |
| 8 | D1 | passive | Drain terminal D1 (pins 7 and 8 are both D1); the datasheet rates drain-source voltage at 40 V (N-channel) and -40 V (P-channel), with continuous drain current 10 A and -10 A at Ta=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-channel Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| P-channel Drain-Source Voltage | VDS |  |  | -40 | V |  | 1 |
| N-channel Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| P-channel Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| N-channel Continuous Drain Current | ID |  |  | 10 | A | Ta= 25℃ | 1 |
| P-channel Continuous Drain Current | ID |  |  | -10 | A | Ta= 25℃ | 1 |
| N-channel Continuous Drain Current | ID |  |  | 6.5 | A | Ta= 100℃ | 1 |
| P-channel Continuous Drain Current | ID |  |  | -6.5 | A | Ta= 100℃ | 1 |
| N-channel Pulsed Drain Current | IDM |  |  | 40 | A |  | 1 |
| P-channel Pulsed Drain Current | IDM |  |  | -40 | A |  | 1 |
| N-channel Single Pulse Avalanche Energy | EAS |  |  | 19 | mJ |  | 1 |
| P-channel Single Pulse Avalanche Energy | EAS |  |  | 27.5 | mJ |  | 1 |
| N-channel Power Dissipation | Pd |  |  | 3.4 | W | TC = 25℃ | 1 |
| P-channel Power Dissipation | Pd |  |  | 7.5 | W | TC = 25℃ | 1 |
| Junction Temperature | TJ | -55 |  | 150 | ℃ |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | ℃ |  | 1 |
| N-channel Drain-Source Breakdown Voltage | V(BR)DSS | 40 |  |  | V | VGS=0V, ID=250μA | 2 |
| N-channel Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=40V, VGS=0V | 2 |
| N-channel Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| N-channel Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| N-channel Static Drain-Source on-Resistance | RDS(on) |  | 17 | 20 | mΩ | VGS=10V, ID=10A | 2 |
| N-channel Static Drain-Source on-Resistance | RDS(on) |  | 22 | 27 | mΩ | VGS=4.5V, ID=5A | 2 |
| N-channel Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 10 | A |  | 2 |
| N-channel Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 40 | A |  | 2 |
| N-channel Drain to Source Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS=0V, IS= 10A | 2 |
| P-channel Drain-Source Breakdown Voltage | V(BR)DSS | -40 |  |  | V | VGS=0V, ID=250μA | 3 |
| P-channel Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=-40V, VGS=0V | 3 |
| P-channel Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 3 |
| P-channel Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250μA | 3 |
| P-channel Static Drain-Source on-Resistance | RDS(on) |  | 34 | 44 | mΩ | VGS=-10V, ID=-8A | 3 |
| P-channel Static Drain-Source on-Resistance | RDS(on) |  | 46 | 62 | mΩ | VGS=-4.5V, ID=-5A | 3 |
| P-channel Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | -10 | A |  | 3 |
| P-channel Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | -40 | A |  | 3 |
| P-channel Drain to Source Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS=0V, IS=-10A | 3 |

## CAD (KiCad official)

- Symbol: `10G04S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `10g04s-etched.step` / `10g04s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `10g04s.step` / `10g04s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600482573412159488) (11 pp, sha256 `c83bcaee031ef234`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/10g04s-datasheet.pdf)