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Contents

README

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100N03A

UMW · MOSFETs · TO-252

100N03A from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE, the MOSFET control terminal; gate-source voltage is rated ±20 V (VGS) in the absolute maximum ratings.
2 D passive DRAIN, the main power terminal; drain-source voltage is rated 30 V (VDS) in the absolute maximum ratings.
3 S passive SOURCE, the main power return terminal and the reference for the gate-source voltage.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Gate-Body Leakage IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.7 2.5 V VDS=VGS, IDS=250µA 2
Drain-Source On-State Resistance RDS(ON) 3.8 4.9 mΩ VGS=10V, IDS=30A 2
Drain-Source On-State Resistance RDS(ON) 6.4 7.9 mΩ VGS=4.5V, IDS=20A 2
Input Capacitance Ciss 1963 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 248 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 221 pF VDS=15V, VGS=0V, f=1MHz 2
Gate Resistance Rg 1.43 Ω VDD=0V, VGS=1V, f=1MHz 2
Turn-On Delay Time tD(on) 55 ns VGS=10V, VDS=15V, RGEN=3Ω, ID=20A 2
Rise Time tr 36.4 ns VGS=10V, VDS=15V, RGEN=3Ω, ID=20A 2
Turn-Off Delay Time tD(off) 37.5 ns VGS=10V, VDS=15V, RGEN=3Ω, ID=20A 2
Fall Time tf 14 ns VGS=10V, VDS=15V, RGEN=3Ω, ID=20A 2
Total Gate Charge at 10V Qg 41 nC VDS=15V, IDS=45A, VGS=10V 2
Gate to Source Gate Charge Qgs 6.4 nC VDS=15V, IDS=45A, VGS=10V 2
Gate to Drain Miller Charge Qgd 11 nC VDS=15V, IDS=45A, VGS=10V 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS=0V, IDS=20A 3
Reverse Recovery Time trr 21.7 nS TJ=25°C, IF=20A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 7.2 nC TJ=25°C, IF=20A, di/dt=100A/µs 3
Drain-Source Voltage VDS 30 V TA=25°C 1
Gate-Source Voltage VGS -20 20 V TA=25°C 1
Drain Current-Continuous ID 100 A TC=25°C 1
Drain Current-Continuous ID 63 A TC=100°C 1
Drain Current-Pulsed IDM 200 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Avalanche Energy EAS 280 mJ Note 4: L=0.5mH, VDD=15V, VG=10V, VGATE=30V, Start TJ=25°C 1
Avalanche Current IAS 33 A 1
Maximum Power Dissipation PD 105 W TC=25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance, Junction-to-Case RθJC 3.3 °C/W 2

CAD (KiCad official)

  • Symbol: 100N03A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 100n03a-etched.step / 100n03a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 100n03a.step / 100n03a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 3607efac27ff82f4, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF