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Contents

README

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TPS563208DDCR

Texas Instruments · DC-DC Converters · TSOT-23-6

TPS563208DDCR from Texas Instruments, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground pin. Source terminal of the low-side power NFET and the ground return for the controller circuit. Connect the sensitive VFB to this GND at a single point.
2 SW output Switch node connection between the internal high-side NFET and low-side NFET. Connect to the output inductor. Absolute-max range −2 V to 19 V; SW voltage referenced during 10-ns transient extends −3.5 V to 21 V.
3 VIN power_in Input voltage supply pin and drain terminal of the high-side power NFET. Recommended operating range 4.5 V to 17 V. Bypass to GND with a low-ESR ceramic capacitor.
4 VFB input Converter feedback input. Connect to the output voltage through a feedback resistor divider. Internal reference V_FBTH ≈ 768 mV (CCM); input current ≤ ±0.1 µA.
5 EN input Enable input control. Active high; must be pulled up to enable the device. V_ENH ≥ 1.6 V (on), V_ENL ≤ 0.8 V (off). Internal pull-down resistance to GND ≈ 400 kΩ (225-900 kΩ).
6 VBST power_out Bootstrap supply input for the high-side NFET gate-drive circuit. Connect a 0.1-µF ceramic capacitor between VBST and SW. Absolute-max VBST (vs SW) 6.5 V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TSOT-23-6
Category PMIC
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • TPS563208DDCR
  • TPS563208DDCRDDCT

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply input voltage range VIN 4.5 17 V 4
Input voltage range VBST VBST -0.1 23 V 4
Input voltage range VBST (10 ns transient) VBST -0.1 26 V 10 ns transient 4
Input voltage range VBST (vs SW) VBST -0.1 6 V vs SW 4
Input voltage range EN VI -0.1 17 V EN 4
Input voltage range VFB VI -0.1 5.5 V VFB 4
Input voltage range SW VI -1.8 17 V SW 4
Input voltage range SW (10 ns transient) VI -3.5 20 V 10 ns transient, SW 4
Operating junction temperature TJ -40 125 °C 4
Input voltage VIN, EN VIN, EN -0.3 19 V 3
Input voltage VBST VBST -0.3 25 V 3
Input voltage VBST (10 ns transient) VBST -0.3 27 V 10 ns transient 3
Input voltage VBST (vs SW) VBST -0.3 6.5 V vs SW 3
Input voltage VFB VFB -0.3 6.5 V 3
Input voltage SW SW -2 19 V 3
Input voltage SW (10 ns transient) SW -3.5 21 V 10 ns transient 3
Operating junction temperature TJ -40 150 °C 3
Storage temperature Tstg -55 150 °C 3
Operating non-switching VIN supply current (TPS563208) IVIN 590 750 µA EN = 5 V, VFB = 0.8 V 5
Shutdown supply current IVINSDN 1 10 µA VIN current, EN = 0 V 5
EN high-level input voltage VENH 1.6 V EN 5
EN low-level input voltage VENL 0.8 V EN 5
EN pin resistance to GND REN 225 400 900 kΩ VEN = 12 V 5
VFB threshold voltage (continuous mode) VFBTH 749 768 787 mV VO = 1.05 V, continuous mode operation 5
VFB input current IVFB -0.1 0 0.1 µA VFB = 0.8 V 5
Current limit Iocl 3.3 4.2 5.1 A DC current, VOUT = 1.05 V, L1 = 1.5 µH 5
UVLO wake-up VIN voltage UVLO 4 4.3 V Wake up VIN voltage 5
UVLO shutdown VIN voltage UVLO 3.3 3.6 V Shutdown VIN voltage 5
UVLO hysteresis VIN voltage 0.4 V 5
Minimum off time tOFF(MIN) 220 310 ns VFB = 0.5 V 5
Soft-start time Tss 1 ms Internal soft-start time 5
Switching frequency Fsw 580 kHz VIN = 12 V, VO = 1.05 V, FCCM mode 5
Output UVP threshold VUVP 65 % Hiccup detect (H > L) 5
Hiccup on time THICCUP_WAIT 1.8 ms 5
Hiccup time before restart THICCUP_RE 15 ms 5
VFB threshold voltage (Eco-mode) VFBTH 774 mV VO = 1.05 V, IO = 10 mA, Eco-mode operation 5
High-side switch resistance RDS(on)h 95 mΩ TA = 25°C, VBST – SW = 5.5 V 5
Low-side switch resistance RDS(on)l 57 mΩ TA = 25°C 5
Thermal shutdown threshold (shutdown temperature) TSDN 172 °C 5
Thermal shutdown hysteresis TSDN 37 °C 5
Junction-to-ambient thermal resistance RθJA 92.6 °C/W 4
Junction-to-case (top) thermal resistance RθJC(top) 48.5 °C/W 4
Junction-to-board thermal resistance RθJB 15.5 °C/W 4
Junction-to-top characterization parameter ψJT 2.5 °C/W 4
Junction-to-board characterization parameter ψJB 15.5 °C/W 4

CAD (KiCad official)

  • Symbol: TPS563208DDCR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: TSOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: tps563208ddcr-etched.step / tps563208ddcr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps563208ddcr.step / tps563208ddcr.glb are the bare package body.

3D model downloads

Two STEP files. Same geometry, different body top:

File Size Use it when
tps563208ddcr.step 97 KB You want the bare part, or you mark your own boards.
tps563208ddcr-etched.step 2.9 MB You want the part with TPS563208DDCR already on it.

The marking in the etched file is real recessed geometry cut into the solid, not a texture or a decal: 682 faces against 117 in the bare model. It survives export, section views, and rendering in any CAD tool, and it drops straight into KiCad or Fusion with no extra setup.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (27 pp, sha256 b1e861e0a063eafe, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF