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Contents

README

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SI3433CDV-T1-GE3-VB

VBsemi Elec · MOSFETs · TSOP-6

SI3433CDV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain. Ganged with pins 2, 5, 6 for current handling and thermal conduction (bonded to package foot). VDS(max) = -30 V; ID(cont) = -4.8 A at TC = 25 °C; RDS(on) = 0.049 Ω at VGS = -10 V.
2 D passive Drain (ganged with pins 1, 5, 6). See pin 1.
3 G input Gate. VGS(max) = ±20 V; VGS(th) = -0.5 V to -2.0 V at VDS = VGS, ID = -250 µA. Gate resistance Rg ≈ 7 Ω; Ciss ≈ 450 pF.
4 S passive Source. Reference terminal for VGS and body-diode anode of the P-channel MOSFET. Continuous source-drain diode current IS = -2.5 A at TC = 25 °C; VSD ≈ -0.8 to -1.2 V at IS = -3.3 A.
5 D passive Drain (ganged with pins 1, 2, 6). See pin 1.
6 D passive Drain (ganged with pins 1, 2, 5). See pin 1.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • SI3433CDV-T1-GE3-VB

CAD (KiCad official)

  • Symbol: SI3433CDV-T1-GE3-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 654a91574e71f23d, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF