SI2301

@@ -3,43 +3,100 @@   "type": "component",   "slug": "si2301",   "title": "SI2301",-  "brief": "P-channel MOSFET, -20V, -2.3A, SOT-23",+  "brief": "YONGYUTAI MOSFETs, SOT-23. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "si2301"   ],-  "license": "MIT",   "component": {     "mpn": "SI2301",-    "manufacturer": "Vishay",+    "manufacturer": "YONGYUTAI",     "package": "SOT-23",-    "pin_count": null,-    "category": "library",-    "subcategory": "",-    "body_size": null,-    "parts": {},-    "distributor_links": {}+    "pin_count": 3,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944311895666688",+    "parts": {+      "symbol": "si2301.kicad_sym",+      "footprint": "si2301.kicad_mod",+      "model_3d": "si2301.glb",+      "model_3d_step": "si2301.step",+      "lbr": "si2301.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Controls the channel; VGS(th) typ -0.62 V, absolute max VGS = \u00b110 V. Drive to a negative VGS (relative to source) to enhance the P-channel."+      },+      {+        "number": "2",+        "name": "S",+        "type": "passive",+        "description": "Source. Typically tied to the higher potential (e.g. VBUS) in a high-side P-channel switch topology."+      },+      {+        "number": "3",+        "name": "D",+        "type": "passive",+        "description": "Drain. Channel current path to the load; ID = -2.2 A continuous, -8 A pulsed. BVDSS = -20 V. Body diode (drain-to-source) VSD max -1.5 V at IS = -0.75 A."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944311895666688",+        "pages": 3,+        "sha256": "5da0b6fea01173ce",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }   },-  "readme": "# SI2301\n\nP-channel MOSFET, -20V, -2.3A, SOT-23\n\nThe SI2301 is a P-channel enhancement MOSFET in SOT-23 package from Vishay. Rated at -20V and -2.3A continuous. Used for high-side switching, reverse polarity protection, and load management.",+  "metadata": {+    "specs": {+      "Manufacturer": "YONGYUTAI",+      "Package": "SOT-23",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "si2301"+  ],+  "discovery_pitch": "SI2301 (YONGYUTAI) component page with datasheet-verified CAD.",   "author": {-    "name": "Kyle Bergstedt",-    "email": "[email protected]"+    "name": "Ray",+    "email": "[email protected]"   },-  "visibility": "public",+  "dependencies": {},   "hero": {     "type": "image",     "path": "docs/hero.png"   },-  "sample_prompts": [],-  "discovery_triggers": [],-  "discovery_pitch": null,-  "metadata": {},-  "created_at": "2026-05-28T05:34:11.193Z",-  "updated_at": "2026-05-28T05:34:11.193Z",-  "description": "YONGYUTAI MOSFETs, SOT-23. Datasheet-verified pinout, KiCad symbol/footprint/3D.",-  "dependencies": {},   "files": [     "page.json",     "README.md",