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Contents

README

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PC817X2NSZ9F

Sharp Microelectronics · Transistor, Photovoltaic Output Optoisolators · DIP-4

PC817X2NSZ9F from Sharp Microelectronics, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A input LED anode; maximum forward current IF = 50 mA (absolute max), VF = 1.2 V typ / 1.4 V max at IF = 20 mA.
2 K passive LED cathode; reverse voltage VR max = 6 V, reverse current IR max = 10 µA at VR = 4 V.
3 E passive Phototransistor emitter; emitter-collector breakdown voltage BVECO min = 6 V (IF = 10 µA, IF = 0).
4 C passive Phototransistor collector (open-collector); VCEO max = 80 V, IC max = 50 mA, collector power dissipation PC max = 150 mW.

Key specifications

Parameter Value
Manufacturer Sharp Microelectronics
Package DIP-4
Category Optoisolators
Pins 4

CAD (KiCad official)

  • Symbol: PC817X2NSZ9F
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: pc817x2nsz9f-etched.step / pc817x2nsz9f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pc817x2nsz9f.step / pc817x2nsz9f.glb are the bare package body.
  • Laser-etched variant: pc817x2nsz9f-etched.step / pc817x2nsz9f-etched.glb, the same package body with the MPN marked on the die, in a toggleable Adom.LaserEtch group (Fusion-ready).

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Sharp Microelectronics datasheet (12 pp, sha256 9288b2839769e718, retrieved 2026-09-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-sonnet-4-6 (vision), consensus claude-opus-4-7 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF