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Contents

README

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NTD4969NT4G-VB

VBsemi Elec · MOSFETs · TO-252

NTD4969NT4G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate control terminal of the N-channel MOSFET. Absolute maximum VGS = ±20 V; typical gate threshold VGS(th) = 1.0-2.5 V at ID = 250 µA.
2 D passive Drain. Power terminal of the N-channel MOSFET; also electrically connected to the tab/heat slug of the TO-252 package. VDS(max) = 30 V, continuous ID = 80 A at TC = 25 °C.
3 S passive Source. Return power terminal of the N-channel MOSFET. Internal body diode is present between source (anode) and drain (cathode); VSD ≈ 0.8 V typ at IS = 22 A.
4 D passive Drain tab. Large exposed metal tab of the TO-252 package, electrically common with pin 2 (Drain); serves as the primary thermal path to the PCB.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • NTD4969NT4G-VB

CAD (KiCad official)

  • Symbol: NTD4969NT4G-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ntd4969nt4g-vb-etched.step / ntd4969nt4g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd4969nt4g-vb.step / ntd4969nt4g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 8ebe58fdbbba1f92, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF