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NTD4906NAT4G-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsntd4906nat4g-vb
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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NTD4906NAT4G-VB

VBsemi Elec · MOSFETs · TO-252

NTD4906NAT4G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. MOSFET control terminal. Absolute maximum VGS = ±20 V. Threshold voltage VGS(th) = 1.5-2.5 V (typ. ~2 V at ID = 250 µA). Gate resistance Rg typ. 1.4 Ω, total gate charge Qg typ. 151 nC at VGS = 10 V.
2 D passive Drain. High-current power terminal, also electrically connected to the tab of the TO-252 package for heatsinking. Drain-Source breakdown voltage VDS ≥ 30 V. Continuous drain current ID up to 100 A at TC = 25 °C (package limited to 90 A). RDS(on) typ. 0.002 Ω at VGS = 10 V.
3 S passive Source. Low-side power terminal / current return of the N-channel MOSFET. Also serves as anode reference of the intrinsic body diode (VSD typ. 0.8 V at IS = 22 A). Continuous source-drain diode current IS up to 90 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • NTD4906NAT4G-VB

CAD (KiCad official)

  • Symbol: NTD4906NAT4G-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 40d505d1ff3169e1, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF