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Contents

README

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IRFR3806TRPBF-VB

VBsemi Elec · MOSFETs · TO-252

IRFR3806TRPBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate input controlling channel conduction. Absolute maximum VGS = ±20 V; typical gate threshold voltage VGS(th) = 1 to 3 V.
2 D passive Drain. High-side power terminal of the N-channel MOSFET. Rated VDS = 60 V, continuous ID = 58 A at TC = 25 °C, pulsed IDM = 100 A. Electrically common with the exposed tab.
3 S passive Source. Low-side power terminal of the N-channel MOSFET and anode of the intrinsic body diode. Continuous source current IS = 50 A; diode forward voltage VSD ≈ 1 V at IF = 20 A.
4 D passive Drain (exposed thermal tab). Electrically identical to pin 2; provides the primary thermal path to the PCB. Solder to a copper pour for RthJA reduction.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • IRFR3806TRPBF-VB

CAD (KiCad official)

  • Symbol: IRFR3806TRPBF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr3806trpbf-vb-etched.step / irfr3806trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr3806trpbf-vb.step / irfr3806trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 82f61690c0ca4444, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF