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INA181A4IDBVR

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Texas Instruments Current-Sensing Amplifiers, SOT-23-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componentop-amp-cmpina181a4idbvr
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3D Model

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Datasheet

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Contents

README

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INA181A4IDBVR

Texas Instruments · Current-Sensing Amplifiers · SOT-23-6

INA181A4IDBVR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT output Analog output voltage. OUT = (IN+ - IN-) x 200 V/V + V_REF, referenced to the REF pin. Drives loads to within the specified swing of V_S and GND.
2 GND power_in Device ground (analog return).
3 IN+ input Current-sense amplifier positive input. For high-side applications, connect to the bus-voltage side of the sense resistor; for low-side applications, connect to the load side of the sense resistor. Common-mode range -0.2 V to +26 V independent of V_S.
4 IN- input Current-sense amplifier negative input. For high-side applications, connect to the load side of the sense resistor; for low-side applications, connect to the ground side of the sense resistor.
5 REF input Reference input that sets the output zero-current level (0 V to V_S). Tie to GND for unidirectional sensing, or drive to V_S/2 for bidirectional sensing. Drive from a low-impedance source since REF impedance affects gain error.
6 VS power_in Positive power-supply pin, 2.7 V to 5.5 V. Bypass with a 0.1 µF ceramic capacitor to GND placed close to the pin. Quiescent current up to 260 µA.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-6
Category Op-amp/Cmp
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • INA181A4IDBVR
  • INA181A4IDBVT
  • INA181A4IDBVRIDGSR
  • INA181A4IDBVRIDGST
  • INA181A4IDBVRIPWR
  • INA181A4IDBVRIPWT

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Common-mode rejection ratio, RTI CMRR 84 100 dB VIN+ = 0 V to 26 V, VSENSE = 0 mV, TA = –40°C to +125°C 8
Offset voltage, RTI VOS -500 100 500 μV VSENSE = 0 mV 8
Offset voltage, RTI VOS -150 25 150 μV VSENSE = 0 mV, VIN+ = 0 V 8
Offset drift, RTI dVOS/dT 0.2 1 μV/°C VSENSE = 0 mV, TA = –40°C to +125°C 8
Power-supply rejection ratio, RTI PSRR -40 8 40 μV/V VS = 2.7 V to 5.5 V, VIN+ = 12 V, VSENSE = 0 mV 8
Input offset current IIO -0.05 0.05 µA VSENSE = 0 mV 8
Gain error EG -1 0.1 1 % VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C 8
Gain error vs temperature 1.5 20 ppm/°C TA = –40°C to +125°C 8
Nonlinearity error -0.01 0.01 % VOUT = 0.5 V to VS – 0.5 V 8
Maximum capacitive load 1 nF No sustained oscillation 8
Quiescent current (INA181) IQ 195 260 µA VSENSE = 0 mV 8
Quiescent current (INA181) IQ 300 µA VSENSE = 0 mV, TA = –40°C to +125°C 8
Input bias current IIB -6 µA VSENSE = 0 mV, VIN+ = 0 V 8
Input bias current IIB 75 µA VSENSE = 0 mV 8
Gain G 200 V/V A4 devices 8
Bandwidth BW 105 kHz A4 devices, CLOAD = 10 pF 8
Slew rate SR 2 V/µs 8
Voltage noise density 40 nV/√Hz 8
Supply voltage VS 6 V 7
Analog inputs differential voltage (VIN+) – (VIN–) -26 26 V 7
Analog inputs common-mode voltage (IN+, IN–) 26 V 7
Maximum output current, IOUT IOUT 8 mA 7
Operating free-air temperature (absolute maximum) TA -55 150 °C 7
Junction temperature TJ 150 °C 7
Storage temperature Tstg -65 150 °C 7
Common-mode input voltage (IN+ and IN–) VCM -0.2 12 26 V 7
Operating supply voltage VS 2.7 5 5.5 V 7
Operating free-air temperature TA -40 125 °C 7
Junction-to-ambient thermal resistance (DBV SOT-23) RθJA 198.7 °C/W 7
Junction-to-case (top) thermal resistance (DBV SOT-23) RθJC(top) 120.9 °C/W 7
Junction-to-board thermal resistance (DBV SOT-23) RθJB 52.3 °C/W 7
Junction-to-top characterization parameter (DBV SOT-23) ψJT 30.3 °C/W 7
Junction-to-board characterization parameter (DBV SOT-23) ψJB 52 °C/W 7

CAD (KiCad official)

  • Symbol: INA181A4IDBVR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: ina181a4idbvr-etched.step / ina181a4idbvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ina181a4idbvr.step / ina181a4idbvr.glb are the bare package body.

3D model downloads

Two STEP files. Same geometry, different body top:

File Size Use it when
ina181a4idbvr.step 97 KB You want the bare part, or you mark your own boards.
ina181a4idbvr-etched.step 2.0 MB You want the part with INA181A4IDBVR already on it.

The marking in the etched file is real recessed geometry cut into the solid, not a texture or a decal: 518 faces against 117 in the bare model. It survives export, section views, and rendering in any CAD tool, and it drops straight into KiCad or Fusion with no extra setup.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (58 pp, sha256 f6bd362733887a4d, retrieved 2026-08-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF