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IKW08T120

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsikw08t120
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IKW08T120

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW08T120 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate terminal that controls collector-emitter conduction. VGE(th) typ 5.8 V; absolute maximum VGE = +/-20 V. Drive with a series gate resistor (datasheet characterization uses RG = 81 ohm).
2 C passive Collector. High-voltage power terminal; blocks up to VCES = 1200 V. Rated DC IC = 16 A at TC = 25 degC (8 A at TC = 100 degC), pulsed IC,puls = 24 A. Also the cathode of the anti-parallel emitter-controlled HE diode.
3 E passive Emitter. Power-return terminal referenced to the gate drive. Also the anode of the anti-parallel emitter-controlled HE diode (IF up to 16 A at TC = 25 degC, VF typ 1.7 V).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IKW08T120
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw08t120-etched.step / ikw08t120-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw08t120.step / ikw08t120.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 b46bd00f17bbc5e5, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF