IN-S63BTG — Component Characterization

Wavelength
527nm
530nm peak

Luminous Intensity

720mcd

@ 20mA

Forward Voltage

3.3V

typical @ 20mA

Forward Current

25mA

20mA typical

Viewing Angle

120°

2θ½

Package

0603

1.6×0.8×0.3mm

Electrical Characteristics

Forward Voltage (typ)	3.3V @ 20mA
Forward Voltage (max)	3.6V
Reverse Voltage (max)	5V
Forward Current (max)	25mA
Peak Forward Current	100mA (1/10, 0.1ms)
Power Dissipation	75mW
Dominant Wavelength	527nm
Peak Wavelength	530nm
Luminous Intensity	720 mcd @ 20mA
Viewing Angle (2θ½)	120°
Material	InGaN
Lens Type	Clear

Operating Conditions

Operating Temp	−30°C to +85°C
Storage Temp	−40°C to +90°C
ESD Sensitivity	InGaN — handle with care
Polarity	Cathode marked on package

⚠ ESD Sensitive Device — InGaN LEDs require proper ESD precautions during handling and assembly. Use grounded wrist straps and ESD-safe workstations.

Package & Dimensions

Recommended Land Pattern

Pad Width	0.7 ± 0.1mm
Pad Height	0.7 ± 0.1mm
Pad Spacing (center-to-center)	0.7 ± 0.1mm
Polarity	Cathode marked on PCB

Spectral Distribution

Emission Spectrum — Relative Intensity vs. Wavelength

Green emission centered at 527nm dominant wavelength (530nm peak). The spectral width (~35nm FWHM) is typical of InGaN LEDs.

Forward Current vs. Forward Voltage

IV Characteristic — the essential curve for circuit design

Characteristic exponential IV curve for a InGaN green LED. Design point: 3.3V typical at 20mA. Never exceed 25mA continuous forward current.

Forward Current Derating

Maximum Forward Current vs. Ambient Temperature

Maximum forward current decreases linearly with temperature above 25°C. At 85°C, significant derating is required. Design margin is critical in enclosed or high-temperature applications.

Luminous Intensity vs. Forward Current

Relative Brightness (normalized at 20mA)

Brightness increases sublinearly with current. Diminishing returns at higher drive currents — optimize for efficiency at or below 20mA.

Luminous Intensity vs. Temperature

Relative Brightness vs. Ambient Temperature (normalized at 25°C)

InGaN LEDs lose brightness at elevated temperatures. At 70°C, expect ~30% reduction. Account for this in designs with wide temperature swings.

LED Resistor Calculator

⚡ Series Resistor Selection

Supply Voltage

Volts

Desired Current

Milliamps

Calculated Resistor

90.0 Ω

R = (5.0V - 3.3V) / 20mA

Nearest E24 Value

91.0 Ω

Actual If = 19.8mA

Resistor Power

35.6 mW

P = (V_supply - V_f) × I_f

LED Power

63.3 mW

P = V_f × I_f (max 75mW)

Environmental & Handling

ESD Sensitivity

InGaN — ESD precautions required

Use grounded wrist straps & ESD-safe tools

Operating Temperature

Continuous operation range

−30°C to +85°C

Storage Temperature

Unbiased storage

−40°C to +90°C

Moisture Sensitivity

MSL noted in packaging

Follow J-STD-020 bake requirements

Symbol, Footprint & 3D Model

Schematic Symbol

Footprint (0603)

3D Model (interactive)

Click & drag to rotate · Scroll to zoom

Export: KiCad Symbol (.kicad_sym) KiCad Footprint (.kicad_mod) Fusion 360 (.lbr) 3D Model (.step)

Datasheet	IN-S63BT Series (PDF) →
Series	IN-S63BT
Manufacturer	Inolux Corporation

IN-S63BTG — Green