IN-S63BT5UW — Component Characterization

Color Temp
White
CIE x=0.29, y=0.29

Luminous Intensity

450mcd

@ 5mA

Forward Voltage

3.0V

typical @ 5mA

Forward Current

25mA

5mA typical

Viewing Angle

120°

2θ½

Package

0603

1.6×0.8×0.3mm

Electrical Characteristics

Forward Voltage (typ)	3.0V @ 5mA
Forward Voltage (max)	3.1V
Reverse Voltage (max)	5V
Forward Current (max)	25mA
Peak Forward Current	100mA (1/10, 0.1ms)
Power Dissipation	75mW
CIE Chromaticity	x=0.29, y=0.29
Luminous Intensity	450 mcd @ 5mA
Viewing Angle (2θ½)	120°
Material	InGaN + phosphor
Lens Type	Clear

Operating Conditions

Operating Temp	−30°C to +85°C
Storage Temp	−40°C to +90°C
ESD Sensitivity	InGaN — handle with care
Polarity	Cathode marked on package

⚠ ESD Sensitive Device — InGaN LEDs require proper ESD precautions during handling and assembly. Use grounded wrist straps and ESD-safe workstations.

Package & Dimensions

Recommended Land Pattern

Pad Width	0.7 ± 0.1mm
Pad Height	0.7 ± 0.1mm
Pad Spacing (center-to-center)	0.7 ± 0.1mm
Polarity	Cathode marked on PCB

Spectral Distribution

Broad-spectrum White Emission (InGaN + Phosphor)

White LED spectrum shows two peaks: a narrow blue emission from the InGaN die (~450nm) and a broad phosphor-converted yellow-green peak (~560nm). The combination produces white light with CIE coordinates x=0.29, y=0.29.

Forward Current vs. Forward Voltage

IV Characteristic — the essential curve for circuit design

Characteristic exponential IV curve for a InGaN + phosphor white LED. Design point: 3.0V typical at 5mA. Never exceed 25mA continuous forward current.

Forward Current Derating

Maximum Forward Current vs. Ambient Temperature

Maximum forward current decreases linearly with temperature above 25°C. At 85°C, significant derating is required. Design margin is critical in enclosed or high-temperature applications.

Luminous Intensity vs. Forward Current

Relative Brightness (normalized at 5mA)

Brightness increases sublinearly with current. Diminishing returns at higher drive currents — optimize for efficiency at or below 5mA.

Luminous Intensity vs. Temperature

Relative Brightness vs. Ambient Temperature (normalized at 25°C)

InGaN + phosphor LEDs lose brightness at elevated temperatures. At 70°C, expect ~30% reduction. Account for this in designs with wide temperature swings.

LED Resistor Calculator

⚡ Series Resistor Selection

Supply Voltage

Volts

Desired Current

Milliamps

Calculated Resistor

440 Ω

R = (5.0V - 3.0V) / 5mA

Nearest E24 Value

430 Ω

Actual If = 5.1mA

Resistor Power

11.3 mW

P = (V_supply - V_f) × I_f

LED Power

14.3 mW

P = V_f × I_f (max 75mW)

Environmental & Handling

ESD Sensitivity

InGaN — ESD precautions required

Use grounded wrist straps & ESD-safe tools

Operating Temperature

Continuous operation range

−30°C to +85°C

Storage Temperature

Unbiased storage

−40°C to +90°C

Moisture Sensitivity

MSL noted in packaging

Follow J-STD-020 bake requirements

Symbol, Footprint & 3D Model

Schematic Symbol

Footprint (0603)

3D Model (interactive)

Click & drag to rotate · Scroll to zoom

Export: KiCad Symbol (.kicad_sym) KiCad Footprint (.kicad_mod) Fusion 360 (.lbr) 3D Model (.step)

Datasheet	IN-S63BT Series (PDF) →
Series	IN-S63BT
Manufacturer	Inolux Corporation

IN-S63BT5UW — White