component
WTM2300
Public Made by Adomby adom
WPMtek Wei Pan Microelectronics MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
wtm2300: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ WTM2300 from WPMtek Wei Pan Microelectronics, in a SOT-23. Pinout and pin descri | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS= 0V, ID=250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=20V,VGS=0V,TC=25℃ | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±10V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | 0.55 | 0.65 | 1.25 | V | VDS= VGS, ID=250μA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 36 | 41 | mΩ | VGS= 4.5V, ID=3.0A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 52 | 58 | mΩ | VGS= 2.5V, ID=2.0A | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | IS=3.0A,VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | 2.8 | A | | 2 |+| Drain-source Voltage | VDS | | | 20 | V | | 1 |+| Gate-source Voltage | VGS | -10 | | 10 | V | | 1 |+| Drain Current | ID | | | 3 | A | TA=25℃ @ Steady State | 1 |+| Drain Current | ID | | | 2.4 | A | TA=70℃ @ Steady State | 1 |+| Pulsed Drain Current | IDM | | | 12 | A | | 1 |+| Total Power Dissipation | PD | | | 0.7 | W | TA=25℃ | 1 |+| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance Junction-to-Ambient | RθJA | | 178 | | ℃/ W | Steady State; device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (note B) | 1 |+ ## CAD (KiCad official) - Symbol: `WTM2300`
page.json+200−1@@ -149,6 +149,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "3cfc1f6db92cfc65",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS= 0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=20V,VGS=0V,TC=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS= ±10V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.55,+ "typ": 0.65,+ "max": 1.25,+ "conditions": "VDS= VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 36,+ "max": 41,+ "conditions": "VGS= 4.5V, ID=3.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 52,+ "max": 58,+ "conditions": "VGS= 2.5V, ID=2.0A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "IS=3.0A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.8,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "TA=25℃ @ Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.4,+ "conditions": "TA=70℃ @ Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.7,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/ W",+ "min": null,+ "typ": 178,+ "max": null,+ "conditions": "Steady State; device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (note B)",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +389,4 @@ "visibility": { "public": true }-}+}