component
WSD6056DN56
Public Made by Adomby adom
Winsok Semicon MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
wsd6056dn56: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -27,6 +27,36 @@ WSD6056DN56 from Winsok Semicon, in a DFN5x6-8. Pinout and pin descriptions extr | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |+| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |+| Diode Continuous Forward Current | IS | | | 45 | A | Tc=25°C | 1 |+| Continuous Drain Current | ID | | | 45 | A | Tc=25°C | 1 |+| Continuous Drain Current | ID | | | 28.5 | A | Tc=70°C | 1 |+| Pulse Drain Current Tested | IDM | | | 180 | A | Tc=25°C | 1 |+| Maximum Power Dissipation | PD | | | 67 | W | Tc=25°C | 1 |+| Maximum Power Dissipation | PD | | | 45 | W | TC=70°C | 1 |+| Thermal Resistance-Junction to Lead, Steady State | RθJL | | | 5 | °C/W | Steady State | 1 |+| Thermal Resistance-Junction to Ambient | RθJA | | | 45 | °C/W | t 10s | 1 |+| Thermal Resistance-Junction to Ambient | RθJA | | | 90 | °C/W | Steady State | 1 |+| Avalanche Current, Single pulse | IAS | | | 20 | A | L=0.5mH | 1 |+| Avalanche Energy, Single pulse | EAS | | | 20 | mJ | L=0.5mH | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, IDS=250A | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 30 | µA | VDS=60V, VGS=0V, TJ=85°C | 2 |+| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VDS=VGS, IDS=250A | 2 |+| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 16 | 20 | mΩ | VGS=10V, IDS=20A | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 20 | 25 | mΩ | VGS=4.5V, IDS=15A | 2 |+| Diode Forward Voltage | VSD | | 0.75 | 1.2 | V | ISD=1A, VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `WSD6056DN56`
page.json+284−1@@ -185,6 +185,289 @@ "Package": "DFN5x6-8", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "61774a4f40e87c38",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Diode Continuous Forward Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "Tc=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "Tc=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 28.5,+ "conditions": "Tc=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulse Drain Current Tested",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "Tc=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 67,+ "conditions": "Tc=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "TC=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance-Junction to Lead, Steady State",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance-Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "t 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance-Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "Steady State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current, Single pulse",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "L=0.5mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy, Single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "L=0.5mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, IDS=250A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "VDS=60V, VGS=0V, TJ=85°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.5,+ "max": 2.5,+ "conditions": "VDS=VGS, IDS=250A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 16,+ "max": 20,+ "conditions": "VGS=10V, IDS=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 20,+ "max": 25,+ "conditions": "VGS=4.5V, IDS=15A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.75,+ "max": 1.2,+ "conditions": "ISD=1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -226,4 +509,4 @@ "visibility": { "public": true }-}+}