component
WSD6040DN56
Public Made by Adomby adom
Winsok Semicon MOSFETs, DFN-8-EP(6.1x5.2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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wsd6040dn56: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+353−1
README.md+33@@ -27,6 +27,39 @@ WSD6040DN56 from Winsok Semicon, in a DFN-8-EP(6.1x5.2). Pinout and pin descript | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate Threshold Voltage | VGS(TH) | 1 | 1.6 | 2.5 | V | VGS = VDS, IDS = 250µA | 2 |+| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 2 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID = 250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | 1 | | µA | VDS = 48 V, VGS = 0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 30 | µA | VDS = 48 V, VGS = 0V, TJ=85°C | 2 |+| Drain-Source On-state Resistance | RDS(on) | | 14 | 17.5 | mΩ | VGS = 10V, ID = 25A | 2 |+| Drain-Source On-state Resistance | RDS(on) | | 19 | 22 | mΩ | VGS = 4.5V, ID = 20A | 2 |+| Diode Forward Voltage | VSD | | 0.8 | 1.3 | V | ISD = 20A, VGS=0V | 2 |+| Drain-Source Voltage | VDS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 36 | A | TC=25°C | 1 |+| Continuous Drain Current | ID | | | 22 | A | TC=100°C | 1 |+| Continuous Drain Current | ID | | | 8.4 | A | TA=25°C | 1 |+| Continuous Drain Current | ID | | | 6.8 | A | TA=100°C | 1 |+| Pulsed Drain Current | IDM | | | 140 | A | | 1 |+| Avalanche Current | IAS | | | 16 | A | Single pulse L=0.5mH | 1 |+| Single Pulse Avalanche Energy | EAS | | | 64 | mJ | Single pulse L=0.5mH | 1 |+| Diode Continuous Forward Current | IS | | | 18 | A | | 1 |+| Maximum Power Dissipation | PD | | | 37.8 | W | TC=25°C | 1 |+| Maximum Power Dissipation | PD | | | 15.1 | W | TC=100°C | 1 |+| Maximum Power Dissipation | PD | | | 2.08 | W | TA=25°C | 1 |+| Maximum Power Dissipation | PD | | | 1.33 | W | TA=70°C | 1 |+| Maximum Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance Junction to Ambient | RθJA | | | 60 | ℃/W | Steady state; surface mounted on 1in² pad area | 1 |+| Thermal Resistance Junction to Case | RθJC | | | 3.3 | ℃/W | Steady state | 1 |+ ## CAD (KiCad official) - Symbol: `WSD6040DN56`
page.json+320−1@@ -185,6 +185,325 @@ "Package": "DFN-8-EP(6.1x5.2)", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "338ffdd02eb6a03e",+ "rows": [+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VGS = VDS, IDS = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±20V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "VDS = 48 V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "VDS = 48 V, VGS = 0V, TJ=85°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 14,+ "max": 17.5,+ "conditions": "VGS = 10V, ID = 25A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 19,+ "max": 22,+ "conditions": "VGS = 4.5V, ID = 20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.3,+ "conditions": "ISD = 20A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 22,+ "conditions": "TC=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8.4,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.8,+ "conditions": "TA=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 140,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Single pulse L=0.5mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 64,+ "conditions": "Single pulse L=0.5mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Diode Continuous Forward Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 18,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 37.8,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 15.1,+ "conditions": "TC=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.08,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.33,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Steady state; surface mounted on 1in² pad area",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 3.3,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -226,4 +545,4 @@ "visibility": { "public": true }-}+}