← Commit history

orderable attributes: rebuild .lbr with adom-lbr 2.18.0 so MPN, MANUFACTURER and the distributor part numbers reach <technology> (LCSC_PN C2691412). The published library carried no attributes at all, so a BOM had nothing to buy from. Distributor PNs matched on exact MPN AND corroborating manufacturer.

Ray ·0ed329cd33 · ·parent 6098676
2 files changed +29−9
page.json+9−7
@@ -26,19 +26,21 @@       "model_3d_step": "ws3085eesa-gec.step",       "lbr": "ws3085eesa-gec.lbr"     },-    "distributor_links": {},+    "distributor_links": {+      "lcsc": "C2691412"+    },     "pins": [       {         "number": "1",         "name": "RO",         "type": "output",-        "description": "Receiver output. When the receiver is enabled and V(A)-V(B) > -50mV, RO is driven high; when V(A)-V(B) < -200mV, RO is driven low. Fail-safe high when the bus is open/shorted. VOH ≥ 4V @ IO = -4mA; VOL ≤ 0.4V @ IO = 4mA."+        "description": "Receiver output. When the receiver is enabled and V(A)-V(B) > -50mV, RO is driven high; when V(A)-V(B) < -200mV, RO is driven low. Fail-safe high when the bus is open/shorted. VOH \u2265 4V @ IO = -4mA; VOL \u2264 0.4V @ IO = 4mA."       },       {         "number": "2",         "name": "RE",         "type": "input",-        "description": "Active-low receiver output enable. RE = 0 enables RO; RE = 1 places RO in high-impedance. When RE = 1 and DE = 0 the chip enters low-power shutdown (typ. 1.8µA)."+        "description": "Active-low receiver output enable. RE = 0 enables RO; RE = 1 places RO in high-impedance. When RE = 1 and DE = 0 the chip enters low-power shutdown (typ. 1.8\u00b5A)."       },       {         "number": "3",@@ -50,7 +52,7 @@         "number": "4",         "name": "DI",         "type": "input",-        "description": "Driver data input. When DI is low the non-inverting bus output (A) is forced low and inverting (B) high; when DI is high A is high and B is low. VIH ≥ 2.0V, VIL ≤ 0.8V, 100mV typical hysteresis."+        "description": "Driver data input. When DI is low the non-inverting bus output (A) is forced low and inverting (B) high; when DI is high A is high and B is low. VIH \u2265 2.0V, VIL \u2264 0.8V, 100mV typical hysteresis."       },       {         "number": "5",@@ -62,19 +64,19 @@         "number": "6",         "name": "A",         "type": "bidirectional",-        "description": "RS-485/RS-422 bus interface, non-inverting driver output and non-inverting receiver input. ±15kV HBM / ±12kV IEC 61000-4-2 contact-discharge ESD protection. Rated for -7V to +12V common-mode range."+        "description": "RS-485/RS-422 bus interface, non-inverting driver output and non-inverting receiver input. \u00b115kV HBM / \u00b112kV IEC 61000-4-2 contact-discharge ESD protection. Rated for -7V to +12V common-mode range."       },       {         "number": "7",         "name": "B",         "type": "bidirectional",-        "description": "RS-485/RS-422 bus interface, inverting driver output and inverting receiver input. ±15kV HBM / ±12kV IEC 61000-4-2 contact-discharge ESD protection. Rated for -7V to +12V common-mode range."+        "description": "RS-485/RS-422 bus interface, inverting driver output and inverting receiver input. \u00b115kV HBM / \u00b112kV IEC 61000-4-2 contact-discharge ESD protection. Rated for -7V to +12V common-mode range."       },       {         "number": "8",         "name": "VCC",         "type": "power_in",-        "description": "Positive supply, 4.75V to 5.25V (5V nominal). Bypass to GND with a 0.1µF ceramic capacitor. Typical ICC = 450µA (max 600µA), shutdown ISHDN typ. 1.8µA."+        "description": "Positive supply, 4.75V to 5.25V (5V nominal). Bypass to GND with a 0.1\u00b5F ceramic capacitor. Typical ICC = 450\u00b5A (max 600\u00b5A), shutdown ISHDN typ. 1.8\u00b5A."       }     ],     "provenance": {
ws3085eesa-gec.lbr+20−2
@@ -62,6 +62,18 @@   <smd name="6" x="2.4750" y="-0.6350" dx="1.9500" dy="0.6000" layer="1"/>   <smd name="7" x="2.4750" y="0.6350" dx="1.9500" dy="0.6000" layer="1"/>   <smd name="8" x="2.4750" y="1.9050" dx="1.9500" dy="0.6000" layer="1"/>+  <polygon width="0.1200" layer="21">+    <vertex x="-2.6000" y="2.4700"/>+    <vertex x="-2.8400" y="2.8000"/>+    <vertex x="-2.3600" y="2.8000"/>+  </polygon>+  <polygon width="0.1000" layer="51">+    <vertex x="-0.9750" y="2.4500"/>+    <vertex x="1.9500" y="2.4500"/>+    <vertex x="1.9500" y="-2.4500"/>+    <vertex x="-1.9500" y="-2.4500"/>+    <vertex x="-1.9500" y="1.4750"/>+  </polygon>   <wire x1="-2.0600" y1="2.5600" x2="2.0600" y2="2.5600" width="0.1200" layer="21"/>   <wire x1="-2.0600" y1="2.4650" x2="-2.0600" y2="2.5600" width="0.1200" layer="21"/>   <wire x1="-2.0600" y1="-2.5600" x2="-2.0600" y2="-2.4650" width="0.1200" layer="21"/>@@ -70,7 +82,7 @@   <wire x1="2.0600" y1="-2.5600" x2="-2.0600" y2="-2.5600" width="0.1200" layer="21"/>   <text x="0" y="3.480" size="1.27" layer="25" align="bottom-center">&gt;NAME</text>   <text x="0" y="-3.480" size="1.27" layer="27" align="top-center">&gt;VALUE</text>-<!--adom-pin1--><polygon width="0.0500" layer="21"><vertex x="-2.6000" y="2.4700"/><vertex x="-2.8400" y="2.8000"/><vertex x="-2.3600" y="2.8000"/></polygon></package>+</package> </packages> <symbols> <symbol name="WS3085EESA-GEC">@@ -108,7 +120,13 @@         <connect gate="G$1" pin="A" pad="6"/>         <connect gate="G$1" pin="GND" pad="5"/>       </connects>-      <technologies><technology name=""/></technologies>+      <technologies>+        <technology name="">+          <attribute name="MPN" value="WS3085EESA-GEC" constant="no"/>+          <attribute name="MANUFACTURER" value="GEC" constant="no"/>+          <attribute name="LCSC_PN" value="C2691412" constant="no"/>+        </technology>+      </technologies>     </device>   </devices> </deviceset>