component
TX50N06
Public Made by Adomby adom
XDS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
tx50n06: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ TX50N06 from XDS, in a TO-252. Pinout and pin descriptions extracted from the ma | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 2 |+| Gate Threshold Voltage | VGS(th) | 1.4 | | 2.5 | V | VDS=VGS, ID=250μA | 2 |+| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V, VGS=0V | 2 |+| Drain-Source On-Resistance | RDS(ON) | | 14 | 20 | mΩ | VGS=10V, ID=20A | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | IS=20A, VGS=0V | 2 |+| Drain-Source Voltage | VDSS | | | 60 | V | Tc=25℃ unless otherwise noted | 1 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 50 | A | Tc=25℃ | 1 |+| Continuous Drain Current | ID | | | 35.4 | A | Tc=100℃ | 1 |+| Pulsed Drain Current | IDM | | | 90 | A | | 1 |+| Power Dissipation | PD | | | 85 | W | Tc=25℃ | 1 |+| Single pulse avalanche energy | EAS | | | 245 | | L=0.5mH, VDD=30V, RG=25Ω, TJ=25℃ | 1 |+| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | | 175 | ℃ | | 1 |+| Thermal resistance, case to sink | RthCS | | 0.5 | | ℃/W | | 1 |+| Thermal resistance junction to case | RthJC | | 3.3 | | ℃/W | | 1 |+| Thermal resistance junction to ambient | RthJA | | 110 | | ℃/W | | 1 |+ ## CAD (KiCad official) - Symbol: `TX50N06`
page.json+212−1@@ -148,6 +148,217 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a005e05b68a0dabb",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.4,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 14,+ "max": 20,+ "conditions": "VGS=10V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "IS=20A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Tc=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 35.4,+ "conditions": "Tc=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "",+ "min": null,+ "typ": null,+ "max": 245,+ "conditions": "L=0.5mH, VDD=30V, RG=25Ω, TJ=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, case to sink",+ "symbol": "RthCS",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 3.3,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 110,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +400,4 @@ "visibility": { "public": true }-}+}