component
TPS79418DGNR
Public Made by Adomby adom
Texas Instruments Voltage Regulators - Linear, Low Drop Out (LDO) Regulators, MSOP-8-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tps79418dgnr: specified limits as data (metadata.characteristics, 41 rows from the datasheet)
2 files changed
+548−1
README.md+48@@ -27,6 +27,54 @@ TPS79418DGNR from Texas Instruments, in a MSOP-8-EP. Pinout and pin descriptions | Category | Power Management (PMIC) | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| 输入电压范围 (VIN input voltage range) | VIN | 2.7 | | 5.5 | V | | 5 |+| 持续输出电流 (continuous output current) | IOUT | 0 | | 250 | mA | | 5 |+| 固定 VOUT 精度 (fixed output voltage accuracy, TPS79418) | | -3 | | 3 | % | 0µA < IOUT < 250mA，VOUT+1V ≤ VIN ≤ 5.5V | 5 |+| 静态电流 GND current (旧芯片, old die) | IGND | | 170 | 220 | µA | 0µA ≤ IO ≤ 250mA（旧芯片） | 6 |+| 静态电流 GND current (新芯片, new die) | IGND | | 250 | 1000 | µA | 0µA ≤ IO ≤ 250mA（新芯片） | 6 |+| 线路调整率 line regulation | ΔVOUT/ΔVIN | | 0.05 | 0.12 | %/V | VOUT + 1V ≤ VIN ≤ 5.5V | 6 |+| 输出电流限制 output current limit (新芯片, new die) | ICL | | 320 | 460 | mA | VIN = VOUT(NOM) + 1V，VOUT = 0.9 x VOUT(NOM)（仅限新芯片） | 6 |+| 低电平使能输入电压 EN low (旧芯片, old die) | VEN(LOW) | 0 | | 0.7 | V | 2.7V ≤ VIN ≤ 5.5V | 6 |+| 低电平使能输入电压 EN low (新芯片, new die) | VEN(LOW) | 0 | | 0.425 | V | 2.7V ≤ VIN ≤ 5.5V（新芯片） | 6 |+| 关断电流 shutdown current (旧芯片, old die) | ISHDN | | 0.07 | 1 | µA | VEN = 0V，2.7V < VIN < 5.5V（旧芯片） | 6 |+| 关断电流 shutdown current (新芯片, new die) | ISHDN | | 0.01 | 1 | µA | VEN = 0V，2.7V < VIN < 5.5V（新芯片） | 6 |+| 使能引脚电流 EN pin current | IEN | -1 | | 1 | µA | VEN = 0V | 6 |+| UVLO 阈值 VIN rising (旧芯片, old die) | VUVLO | | 2.25 | 2.65 | V | VIN 上升（旧芯片） | 7 |+| UVLO 阈值 VIN rising (新芯片, new die) | VUVLO | | 1.32 | 1.6 | V | VIN 上升（新芯片） | 7 |+| 输入电压 VIN | VIN | 2.7 | | 5.5 | V | | 5 |+| 启用电压 VEN | VEN | 0 | | 5.5 | V | | 5 |+| 输出电压 VOUT (max) | VOUT | | | 5 | V | | 5 |+| 输出电流 IOUT | IOUT | 0 | | 250 | mA | | 5 |+| 输出电容器 COUT | COUT | 1 | 2.2 | | µF | | 5 |+| 降噪电容器 CNR (仅限旧芯片, old die only) | CNR | 0 | 10 | 100 | nF | 仅限旧芯片 | 5 |+| 前馈电容器 CFF (新芯片, new die) | CFF | 10 | | 100 | nF | 新芯片 | 5 |+| 工作结温 operating junction temperature TJ | TJ | -40 | | 125 | °C | | 5 |+| VIN, VEN, VOUT 绝对最大值 (旧芯片, old die) | VIN, VEN, VOUT | -0.3 | | 6 | V | 旧芯片 | 4 |+| VIN, VEN 绝对最大值 (新芯片, new die) | VIN, VEN | -0.3 | | 6.5 | V | 新芯片 | 4 |+| VOUT 绝对最大值 (新芯片, new die) | VOUT | -0.3 | | | V | 新芯片 | 4 |+| 工作结温 operating junction temperature (absolute) | TJ | -40 | | 150 | °C | | 4 |+| 贮存温度 storage temperature | Tstg | -65 | | 150 | °C | | 4 |+| 静电放电 HBM ESD | V(ESD) | -2000 | | 2000 | V | 人体放电模型 (HBM), ANSI/ESDA/JEDEC JS-001, 所有引脚 | 4 |+| 静电放电 CDM ESD | V(ESD) | -500 | | 500 | V | 充电器件模型 (CDM), JESD22-C101, 所有引脚 | 4 |+| 结至环境热阻 RθJA (旧芯片, old die) | RθJA | | 63.6 | | °C/W | DGN (MSOP-8), 旧芯片 | 5 |+| 结至环境热阻 RθJA (新芯片, new die) | RθJA | | 51.9 | | °C/W | DGN (MSOP-8), 新芯片 | 5 |+| 结至外壳（顶部）热阻 RθJC(top) (旧芯片) | RθJC(top) | | 87.1 | | °C/W | DGN (MSOP-8), 旧芯片 | 5 |+| 结至外壳（顶部）热阻 RθJC(top) (新芯片) | RθJC(top) | | 82.8 | | °C/W | DGN (MSOP-8), 新芯片 | 5 |+| 结至电路板热阻 RθJB (旧芯片) | RθJB | | 35.2 | | °C/W | DGN (MSOP-8), 旧芯片 | 5 |+| 结至电路板热阻 RθJB (新芯片) | RθJB | | 25.3 | | °C/W | DGN (MSOP-8), 新芯片 | 5 |+| 结至顶部特征参数 ψJT (旧芯片) | ψJT | | 6.8 | | °C/W | DGN (MSOP-8), 旧芯片 | 5 |+| 结至顶部特征参数 ψJT (新芯片) | ψJT | | 6 | | °C/W | DGN (MSOP-8), 新芯片 | 5 |+| 结至电路板特征参数 ψJB (旧芯片) | ψJB | | 35.2 | | °C/W | DGN (MSOP-8), 旧芯片 | 5 |+| 结至电路板特征参数 ψJB (新芯片) | ψJB | | 25.3 | | °C/W | DGN (MSOP-8), 新芯片 | 5 |+| 结至外壳（底部）热阻 RθJC(bot) (旧芯片) | RθJC(bot) | | 21.2 | | °C/W | DGN (MSOP-8), 旧芯片 | 5 |+| 结至外壳（底部）热阻 RθJC(bot) (新芯片) | RθJC(bot) | | 7.6 | | °C/W | DGN (MSOP-8), 新芯片 | 5 |+ ## CAD (KiCad official) - Symbol: `TPS79418DGNR`
page.json+500−1@@ -187,6 +187,505 @@ "Package": "MSOP-8-EP", "Category": "Power Management (PMIC)", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "84291eb77a7c37c6",+ "rows": [+ {+ "name": "输入电压范围 (VIN input voltage range)",+ "symbol": "VIN",+ "kind": "electrical",+ "unit": "V",+ "min": 2.7,+ "typ": null,+ "max": 5.5,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "持续输出电流 (continuous output current)",+ "symbol": "IOUT",+ "kind": "electrical",+ "unit": "mA",+ "min": 0,+ "typ": null,+ "max": 250,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "固定 VOUT 精度 (fixed output voltage accuracy, TPS79418)",+ "symbol": "",+ "kind": "tolerance",+ "unit": "%",+ "min": -3,+ "typ": null,+ "max": 3,+ "conditions": "0µA < IOUT < 250mA，VOUT+1V ≤ VIN ≤ 5.5V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "静态电流 GND current (旧芯片, old die)",+ "symbol": "IGND",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 170,+ "max": 220,+ "conditions": "0µA ≤ IO ≤ 250mA（旧芯片）",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "静态电流 GND current (新芯片, new die)",+ "symbol": "IGND",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 250,+ "max": 1000,+ "conditions": "0µA ≤ IO ≤ 250mA（新芯片）",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "线路调整率 line regulation",+ "symbol": "ΔVOUT/ΔVIN",+ "kind": "electrical",+ "unit": "%/V",+ "min": null,+ "typ": 0.05,+ "max": 0.12,+ "conditions": "VOUT + 1V ≤ VIN ≤ 5.5V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "输出电流限制 output current limit (新芯片, new die)",+ "symbol": "ICL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": 320,+ "max": 460,+ "conditions": "VIN = VOUT(NOM) + 1V，VOUT = 0.9 x VOUT(NOM)（仅限新芯片）",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "低电平使能输入电压 EN low (旧芯片, old die)",+ "symbol": "VEN(LOW)",+ "kind": "electrical",+ "unit": "V",+ "min": 0,+ "typ": null,+ "max": 0.7,+ "conditions": "2.7V ≤ VIN ≤ 5.5V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "低电平使能输入电压 EN low (新芯片, new die)",+ "symbol": "VEN(LOW)",+ "kind": "electrical",+ "unit": "V",+ "min": 0,+ "typ": null,+ "max": 0.425,+ "conditions": "2.7V ≤ VIN ≤ 5.5V（新芯片）",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "关断电流 shutdown current (旧芯片, old die)",+ "symbol": "ISHDN",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.07,+ "max": 1,+ "conditions": "VEN = 0V，2.7V < VIN < 5.5V（旧芯片）",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "关断电流 shutdown current (新芯片, new die)",+ "symbol": "ISHDN",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.01,+ "max": 1,+ "conditions": "VEN = 0V，2.7V < VIN < 5.5V（新芯片）",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "使能引脚电流 EN pin current",+ "symbol": "IEN",+ "kind": "electrical",+ "unit": "µA",+ "min": -1,+ "typ": null,+ "max": 1,+ "conditions": "VEN = 0V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "UVLO 阈值 VIN rising (旧芯片, old die)",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 2.25,+ "max": 2.65,+ "conditions": "VIN 上升（旧芯片）",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "UVLO 阈值 VIN rising (新芯片, new die)",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.32,+ "max": 1.6,+ "conditions": "VIN 上升（新芯片）",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "输入电压 VIN",+ "symbol": "VIN",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 2.7,+ "typ": null,+ "max": 5.5,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "启用电压 VEN",+ "symbol": "VEN",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 0,+ "typ": null,+ "max": 5.5,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "输出电压 VOUT (max)",+ "symbol": "VOUT",+ "kind": "recommended_operating",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "输出电流 IOUT",+ "symbol": "IOUT",+ "kind": "recommended_operating",+ "unit": "mA",+ "min": 0,+ "typ": null,+ "max": 250,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "输出电容器 COUT",+ "symbol": "COUT",+ "kind": "recommended_operating",+ "unit": "µF",+ "min": 1,+ "typ": 2.2,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "降噪电容器 CNR (仅限旧芯片, old die only)",+ "symbol": "CNR",+ "kind": "recommended_operating",+ "unit": "nF",+ "min": 0,+ "typ": 10,+ "max": 100,+ "conditions": "仅限旧芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "前馈电容器 CFF (新芯片, new die)",+ "symbol": "CFF",+ "kind": "recommended_operating",+ "unit": "nF",+ "min": 10,+ "typ": null,+ "max": 100,+ "conditions": "新芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "工作结温 operating junction temperature TJ",+ "symbol": "TJ",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "VIN, VEN, VOUT 绝对最大值 (旧芯片, old die)",+ "symbol": "VIN, VEN, VOUT",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 6,+ "conditions": "旧芯片",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "VIN, VEN 绝对最大值 (新芯片, new die)",+ "symbol": "VIN, VEN",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 6.5,+ "conditions": "新芯片",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "VOUT 绝对最大值 (新芯片, new die)",+ "symbol": "VOUT",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": null,+ "conditions": "新芯片",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "工作结温 operating junction temperature (absolute)",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "贮存温度 storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "静电放电 HBM ESD",+ "symbol": "V(ESD)",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -2000,+ "typ": null,+ "max": 2000,+ "conditions": "人体放电模型 (HBM), ANSI/ESDA/JEDEC JS-001, 所有引脚",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "静电放电 CDM ESD",+ "symbol": "V(ESD)",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -500,+ "typ": null,+ "max": 500,+ "conditions": "充电器件模型 (CDM), JESD22-C101, 所有引脚",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "结至环境热阻 RθJA (旧芯片, old die)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 63.6,+ "max": null,+ "conditions": "DGN (MSOP-8), 旧芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至环境热阻 RθJA (新芯片, new die)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 51.9,+ "max": null,+ "conditions": "DGN (MSOP-8), 新芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至外壳（顶部）热阻 RθJC(top) (旧芯片)",+ "symbol": "RθJC(top)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 87.1,+ "max": null,+ "conditions": "DGN (MSOP-8), 旧芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至外壳（顶部）热阻 RθJC(top) (新芯片)",+ "symbol": "RθJC(top)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 82.8,+ "max": null,+ "conditions": "DGN (MSOP-8), 新芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至电路板热阻 RθJB (旧芯片)",+ "symbol": "RθJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 35.2,+ "max": null,+ "conditions": "DGN (MSOP-8), 旧芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至电路板热阻 RθJB (新芯片)",+ "symbol": "RθJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 25.3,+ "max": null,+ "conditions": "DGN (MSOP-8), 新芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至顶部特征参数 ψJT (旧芯片)",+ "symbol": "ψJT",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 6.8,+ "max": null,+ "conditions": "DGN (MSOP-8), 旧芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至顶部特征参数 ψJT (新芯片)",+ "symbol": "ψJT",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "DGN (MSOP-8), 新芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至电路板特征参数 ψJB (旧芯片)",+ "symbol": "ψJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 35.2,+ "max": null,+ "conditions": "DGN (MSOP-8), 旧芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至电路板特征参数 ψJB (新芯片)",+ "symbol": "ψJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 25.3,+ "max": null,+ "conditions": "DGN (MSOP-8), 新芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至外壳（底部）热阻 RθJC(bot) (旧芯片)",+ "symbol": "RθJC(bot)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 21.2,+ "max": null,+ "conditions": "DGN (MSOP-8), 旧芯片",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "结至外壳（底部）热阻 RθJC(bot) (新芯片)",+ "symbol": "RθJC(bot)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 7.6,+ "max": null,+ "conditions": "DGN (MSOP-8), 新芯片",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -228,4 +727,4 @@ "visibility": { "public": true }-}+}