component
TPS62202DBVR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tps62202dbvr: specified limits as data (metadata.characteristics, 35 rows from the datasheet)
2 files changed
+469
README.md+42@@ -23,6 +23,48 @@ TPS62202DBVR from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions | Category | Power Management (PMIC) | | Pins | 5 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Supply voltage (absolute maximum) | VI | -0.3 | | 7 | V | All voltage values are with respect to network ground terminal | 3 |+| Voltages on pins SW, EN, FB | | -0.3 | | | V | | 3 |+| Operating junction temperature (absolute maximum) | TJ | -40 | | 150 | °C | | 3 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |+| Supply voltage | VI | 2.5 | | 6 | V | | 4 |+| Output current | IO | | | 300 | mA | | 4 |+| Inductor | L | 4.7 | | 10 | µH | | 4 |+| Input capacitor | CI | 4.7 | | | µF | | 4 |+| Output capacitor | CO | 10 | | | µF | | 4 |+| Operating ambient temperature | TA | -40 | | 85 | °C | | 4 |+| Operating junction temperature | TJ | -40 | | 125 | °C | | 4 |+| Input voltage | VI | 2.5 | | 6 | V | VI = 3.6 V, VO = 1.8 V, IO = 200 mA, EN = VIN, TA = -40°C to 85°C | 5 |+| Operating quiescent current | IQ | | 15 | 30 | µA | IO = 0 mA, Device is not switching | 5 |+| Shutdown supply current | | | 0.1 | 1 | µA | EN = GND | 5 |+| Undervoltage lockout threshold | | | 1.5 | 2 | V | | 5 |+| EN high level input voltage | V(EN) | 1.3 | | | V | | 5 |+| EN low level input voltage | V(EN) | | | 0.4 | V | | 5 |+| EN input bias current | I(EN) | | 0.01 | 0.1 | µA | EN = GND or VIN | 5 |+| P-channel MOSFET on-resistance | rds(ON) | | 530 | 690 | mΩ | VIN = VGS = 3.6 V | 5 |+| P-channel MOSFET on-resistance | rds(ON) | | 670 | 850 | mΩ | VIN = VGS = 2.5 V | 5 |+| N-channel MOSFET on-resistance | rds(ON) | | 430 | 540 | mΩ | VIN = VGS = 3.6 V | 5 |+| N-channel MOSFET on-resistance | rds(ON) | | 530 | 660 | mΩ | VIN = VGS = 2.5 V | 5 |+| P-channel leakage current | Ilkg_(P) | | 0.1 | 1 | µA | VDS = 6.0 V | 5 |+| N-channel leakage current | Ilkg_(N) | | 0.1 | 1 | µA | VDS = 6.0 V | 5 |+| P-channel current limit | I(LIM) | 380 | 480 | 670 | mA | 2.5 V < Vin < 6.0 V | 5 |+| Switching frequency | fS | 650 | 1000 | 1500 | kHz | | 5 |+| Fixed output voltage 1.8 V (TPS62202) feedback voltage | VO | 0 | | 3 | % | VI = 2.5 V to 6 V, IO = 0 mA | 5 |+| Fixed output voltage 1.8 V (TPS62202) feedback voltage | VO | -3 | | 3 | % | VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 300 mA | 5 |+| Leakage current into SW pin | Ilkg | | 0.1 | 1 | µA | Vin > Vout, 0 V ≤ Vsw ≤ Vin | 5 |+| Reverse leakage current into pin SW | Ilkg(Rev) | | 0.1 | 1 | µA | Vin = open, EN = GND, VSW = 6 V | 5 |+| Junction-to-ambient thermal resistance | RθJA | | 220 | | °C/W | | 4 |+| Junction-to-case (top) thermal resistance | RθJC(top) | | 125 | | °C/W | | 4 |+| Junction-to-board thermal resistance | RθJB | | 36 | | °C/W | | 4 |+| Junction-to-top characterization parameter | ψJT | | 14 | | °C/W | | 4 |+| Junction-to-board characterization parameter | ψJB | | 35 | | °C/W | | 4 |+ ## CAD (KiCad official) - Symbol: `TPS62202DBVR`
page.json+427@@ -145,6 +145,433 @@ "Package": "SOT-23-5", "Category": "Power Management (PMIC)", "Pins": "5"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f6ac7e529beda007",+ "rows": [+ {+ "name": "Supply voltage (absolute maximum)",+ "symbol": "VI",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 7,+ "conditions": "All voltage values are with respect to network ground terminal",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Voltages on pins SW, EN, FB",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature (absolute maximum)",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Supply voltage",+ "symbol": "VI",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output current",+ "symbol": "IO",+ "kind": "recommended_operating",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Inductor",+ "symbol": "L",+ "kind": "recommended_operating",+ "unit": "µH",+ "min": 4.7,+ "typ": null,+ "max": 10,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input capacitor",+ "symbol": "CI",+ "kind": "recommended_operating",+ "unit": "µF",+ "min": 4.7,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output capacitor",+ "symbol": "CO",+ "kind": "recommended_operating",+ "unit": "µF",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating ambient temperature",+ "symbol": "TA",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 85,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input voltage",+ "symbol": "VI",+ "kind": "electrical",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 6,+ "conditions": "VI = 3.6 V, VO = 1.8 V, IO = 200 mA, EN = VIN, TA = -40°C to 85°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Operating quiescent current",+ "symbol": "IQ",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 15,+ "max": 30,+ "conditions": "IO = 0 mA, Device is not switching",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Shutdown supply current",+ "symbol": "",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "EN = GND",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Undervoltage lockout threshold",+ "symbol": "",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.5,+ "max": 2,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "EN high level input voltage",+ "symbol": "V(EN)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.3,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "EN low level input voltage",+ "symbol": "V(EN)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "EN input bias current",+ "symbol": "I(EN)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.01,+ "max": 0.1,+ "conditions": "EN = GND or VIN",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "P-channel MOSFET on-resistance",+ "symbol": "rds(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 530,+ "max": 690,+ "conditions": "VIN = VGS = 3.6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "P-channel MOSFET on-resistance",+ "symbol": "rds(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 670,+ "max": 850,+ "conditions": "VIN = VGS = 2.5 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "N-channel MOSFET on-resistance",+ "symbol": "rds(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 430,+ "max": 540,+ "conditions": "VIN = VGS = 3.6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "N-channel MOSFET on-resistance",+ "symbol": "rds(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 530,+ "max": 660,+ "conditions": "VIN = VGS = 2.5 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "P-channel leakage current",+ "symbol": "Ilkg_(P)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "VDS = 6.0 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "N-channel leakage current",+ "symbol": "Ilkg_(N)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "VDS = 6.0 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "P-channel current limit",+ "symbol": "I(LIM)",+ "kind": "electrical",+ "unit": "mA",+ "min": 380,+ "typ": 480,+ "max": 670,+ "conditions": "2.5 V < Vin < 6.0 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Switching frequency",+ "symbol": "fS",+ "kind": "electrical",+ "unit": "kHz",+ "min": 650,+ "typ": 1000,+ "max": 1500,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Fixed output voltage 1.8 V (TPS62202) feedback voltage",+ "symbol": "VO",+ "kind": "tolerance",+ "unit": "%",+ "min": 0,+ "typ": null,+ "max": 3,+ "conditions": "VI = 2.5 V to 6 V, IO = 0 mA",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Fixed output voltage 1.8 V (TPS62202) feedback voltage",+ "symbol": "VO",+ "kind": "tolerance",+ "unit": "%",+ "min": -3,+ "typ": null,+ "max": 3,+ "conditions": "VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 300 mA",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Leakage current into SW pin",+ "symbol": "Ilkg",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "Vin > Vout, 0 V ≤ Vsw ≤ Vin",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse leakage current into pin SW",+ "symbol": "Ilkg(Rev)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "Vin = open, EN = GND, VSW = 6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 220,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-case (top) thermal resistance",+ "symbol": "RθJC(top)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 125,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board thermal resistance",+ "symbol": "RθJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 36,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-top characterization parameter",+ "symbol": "ψJT",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 14,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board characterization parameter",+ "symbol": "ψJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 35,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],