component
TNM3K60FEX
Public Made by Adomby adom
Shenzhen JingYang MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
tnm3k60fex: specified limits as data (metadata.characteristics, 13 rows from the datasheet)
2 files changed
+184−1
README.md+20@@ -21,6 +21,26 @@ TNM3K60FEX from Shenzhen JingYang, in a SOT-523. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 60 | V | | 2 |+| Gate Source Voltage | VGSS | -20 | | 20 | V | | 2 |+| Drain Current (Continuous) | ID | | | 0.3 | A | | 2 |+| Drain Current (Pulse) | IDM | | | 1.2 | A | | 2 |+| Power Dissipation | PD | | | 0.15 | W | | 2 |+| Operating Temperature / Storage Temperature | TJ/TSTG | -55 | | 150 | °C | | 2 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V, ID=250uA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=48V, VGS=0V | 2 |+| Gate Threshold Voltage | VGS(TH) | 1.1 | | 2.1 | V | VDS=VGS, IDS=250uA | 2 |+| Gate Leakage Current | IGSS | -10 | | 10 | uA | VGS=±20V, VDS=0V | 2 |+| Drain-Source On-state Resistance | RDS(on) | | | 2 | Ω | VGS=10V, ID=0.25A | 2 |+| Drain-Source On-state Resistance | RDS(on) | | | 2.8 | Ω | VGS=4.5V, ID=0.25A | 2 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | 833 | | °C/W | Device on 1in2 FR-4 board, 2oz Cu, still air, TA=25°C (footnote A) | 2 |+ ## CAD (KiCad official) - Symbol: `TNM3K60FEX`
page.json+164−1@@ -148,6 +148,169 @@ "Package": "SOT-523", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "552c9ff85f610d63",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Pulse)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.15,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating Temperature / Storage Temperature",+ "symbol": "TJ/TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=48V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.1,+ "typ": null,+ "max": 2.1,+ "conditions": "VDS=VGS, IDS=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "uA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "VGS=10V, ID=0.25A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 2.8,+ "conditions": "VGS=4.5V, ID=0.25A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 833,+ "max": null,+ "conditions": "Device on 1in2 FR-4 board, 2oz Cu, still air, TA=25°C (footnote A)",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +352,4 @@ "visibility": { "public": true }-}+}