component
T810-600B
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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t810-600b: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -21,6 +21,36 @@ T810-600B from STMicroelectronics, in a DPAK. Pinout and pin descriptions extrac | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| RMS on-state current (full sine wave), Tc = 110 °C | IT(RMS) | | | 8 | A | IPAK, DPAK, TO-220AB, D2PAK; Tc = 110 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 80 | A | f = 50 Hz, t = 20 ms; full cycle, Tj initial = 25 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 84 | A | f = 60 Hz, tp = 16.7 ms; full cycle, Tj initial = 25 °C | 2 |+| I2t value for fusing | I2t | | | 36 | A2s | tp = 10 ms | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 125 °C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125 °C | 2 |+| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |+| Triggering gate current (10 mA sensitivity column, T810) | IGT | | | 10 | mA | VD = 12 V, RL = 30 Ω, quadrants I - II - III | 2 |+| Gate trigger voltage | VGT | | | 1.2 | V | quadrants I - II - III | 2 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, quadrants I - II - III | 2 |+| Holding current (10 mA column, T810) | IH | | | 15 | mA | IT = 100 mA, quadrants I - II - III | 2 |+| Latching current (10 mA column, T810), quadrants I and III | IL | | | 25 | mA | IG = 1.2 x IGT, quadrants I - III | 2 |+| Latching current (10 mA column, T810), quadrant II | IL | | | 30 | mA | IG = 1.2 x IGT, quadrant II | 2 |+| Critical rate of rise of off-state voltage (10 mA column, T810) | dV/dt | | | 40 | V/µs | VD = 67% VDRM, gate open, Tj = 125 °C | 2 |+| Threshold on-state voltage | VTO | | | 0.85 | V | Tj = 125 °C | 3 |+| Dynamic resistance | RD | | | 50 | mΩ | Tj = 125 °C | 3 |+| On-state voltage | VTM | | | 1.55 | V | ITM = 11 A, tp = 380 µs, Tj = 25 °C | 3 |+| Off-state and reverse leakage current | IDRM IRRM | | | 5 | µA | VDRM = VRRM, Tj = 25 °C | 3 |+| Off-state and reverse leakage current | IDRM IRRM | | | 1 | mA | VDRM = VRRM, Tj = 125 °C | 3 |+| Max. junction to case thermal resistance (AC) | Rth(j-c) | | | 1.6 | °C/W | IPAK / D2PAK / DPAK / TO-220AB | 3 |+| Junction to ambient thermal resistance (typ.) | Rth(j-a) | | 70 | | °C/W | DPAK; S = 1 cm² copper surface under tab, FR4 PCB, copper 35 µm | 3 |+ ## CAD (KiCad official) - Symbol: `T810-600B`
page.json+284−1@@ -151,6 +151,289 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ad680880278c15e3",+ "rows": [+ {+ "name": "RMS on-state current (full sine wave), Tc = 110 °C",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "IPAK, DPAK, TO-220AB, D2PAK; Tc = 110 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "f = 50 Hz, t = 20 ms; full cycle, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 84,+ "conditions": "f = 60 Hz, tp = 16.7 ms; full cycle, Tj initial = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I2t value for fusing",+ "symbol": "I2t",+ "kind": "absolute_maximum",+ "unit": "A2s",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage junction temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Triggering gate current (10 mA sensitivity column, T810)",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VD = 12 V, RL = 30 Ω, quadrants I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "quadrants I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, quadrants I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current (10 mA column, T810)",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "IT = 100 mA, quadrants I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (10 mA column, T810), quadrants I and III",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "IG = 1.2 x IGT, quadrants I - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current (10 mA column, T810), quadrant II",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "IG = 1.2 x IGT, quadrant II",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage (10 mA column, T810)",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "VD = 67% VDRM, gate open, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Threshold on-state voltage",+ "symbol": "VTO",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "RD",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.55,+ "conditions": "ITM = 11 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Off-state and reverse leakage current",+ "symbol": "IDRM IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Off-state and reverse leakage current",+ "symbol": "IDRM IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDRM = VRRM, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Max. junction to case thermal resistance (AC)",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "IPAK / D2PAK / DPAK / TO-220AB",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction to ambient thermal resistance (typ.)",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 70,+ "max": null,+ "conditions": "DPAK; S = 1 cm² copper surface under tab, FR4 PCB, copper 35 µm",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +475,4 @@ "visibility": { "public": true }-}+}