component
SWF8N65DB
Public Made by Adomby adom
Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+510−26@@ -1,8 +1,11 @@ {+ "schema_version": 1,+ "type": "component", "slug": "swf8n65db",+ "title": "SWF8N65DB",+ "brief": "Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "triode-mos tube-transistor",@@ -10,26 +13,6 @@ "factory-2.0.0", "extractor-text" ],- "dependencies": {},- "hero": {- "type": "image",- "path": "docs/hero.png"- },- "files": [- "page.json",- "README.md",- "swf8n65db.kicad_sym",- "swf8n65db.kicad_mod",- "swf8n65db.glb",- "swf8n65db.step",- "swf8n65db.lbr",- "docs/hero.png",- "docs/swf8n65db-datasheet.pdf",- "viewers/symbol.html",- "viewers/footprint.html",- "swf8n65db-hero.glb",- "swf8n65db-hero.overlay.json"- ], "component": { "mpn": "SWF8N65DB", "manufacturer": "Samwin",@@ -138,10 +121,511 @@ } ] },- "visibility": "public",- "org": "adom",+ "metadata": {+ "specs": {+ "Manufacturer": "Samwin",+ "Package": "TO-220F",+ "Category": "Triode/MOS Tube/Transistor",+ "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "60400363099e3bc86775c43ee8958c219f78541bc9c13e8b8d71084d57288afd",+ "rows": [+ {+ "name": "Drain to source voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (TC=25oC)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "TC=25oC; drain current limited by junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current (TC=100oC)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TC=100oC; drain current limited by junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain current pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate to source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulsed avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 384,+ "conditions": "note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive avalanche energy",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 23,+ "conditions": "note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "note 3",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation (TO-220F)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 17.9,+ "conditions": "TC=25oC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature",+ "symbol": "TSTG, TJ",+ "kind": "recommended_operating",+ "unit": "oC",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum lead temperature for soldering",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "oC",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "1/8 from case for 5 seconds",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derating factor above 25oC (TO-220F)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/oC",+ "min": null,+ "typ": 0.14,+ "max": null,+ "conditions": "above 25oC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to case (TO-220F)",+ "symbol": "Rthjc",+ "kind": "thermal",+ "unit": "oC/W",+ "min": null,+ "typ": 7.0,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Breakdown voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 4.5,+ "conditions": "VDS=VGS, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to source on state resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.0,+ "max": 1.2,+ "conditions": "VGS=10V, ID=4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to source leakage current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=650V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to source leakage current at 125oC",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS=520V, TC=125oC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to source leakage current, forward",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=30V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to source leakage current, reverse",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": null,+ "conditions": "VGS=-30V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Breakdown voltage temperature coefficient",+ "symbol": "ΔBVDSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/oC",+ "min": null,+ "typ": 0.61,+ "max": null,+ "conditions": "ID=250uA, referenced to 25oC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "Gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "VDS=30V, ID=4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1770,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 126,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": null,+ "conditions": "VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rising time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 34,+ "max": null,+ "conditions": "VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 72,+ "max": null,+ "conditions": "VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 32,+ "max": null,+ "conditions": "VDS=325V, ID=8A, RG=25Ω, VGS=10V (note 4,5)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 34,+ "max": null,+ "conditions": "VDS=520V, VGS=10V, ID=8A (note 4,5)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "VDS=520V, VGS=10V, ID=8A (note 4,5)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 14,+ "max": null,+ "conditions": "VDS=520V, VGS=10V, ID=8A (note 4,5)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.6,+ "max": null,+ "conditions": "VDS=0V, Scan F mode",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous source current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "Integral reverse p-n junction diode in the MOSFET",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed source current",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage drop",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.4,+ "max": null,+ "conditions": "IS=8A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 478,+ "max": null,+ "conditions": "IS=8A, VGS=0V, dIF/dt=100A/us",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "uC",+ "min": null,+ "typ": 4.3,+ "max": null,+ "conditions": "IS=8A, VGS=0V, dIF/dt=100A/us",+ "source_page": 2,+ "source": "datasheet"+ }+ ]+ }+ },+ "variants": [],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "swf8n65db"+ ],+ "discovery_pitch": "SWF8N65DB (Samwin) component page: datasheet pinout, KiCad symbol, footprint and 3D.", "author": { "name": "Ray", "email": "[email protected]"- }-}+ },+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "swf8n65db.kicad_sym",+ "swf8n65db.kicad_mod",+ "swf8n65db.glb",+ "swf8n65db.step",+ "swf8n65db.lbr",+ "docs/hero.png",+ "docs/swf8n65db-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html",+ "swf8n65db-hero.glb",+ "swf8n65db-hero.overlay.json"+ ]+}