← Commit history

swf7n65m: factory component page (tier=lcsc)

Ray ·8473e9dc0b ·10d ago ·parent 1b95c73
1 file changed +318−26
page.json+318−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "swf7n65m",+  "title": "SWF7N65M",+  "brief": "Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "triode-mos tube-transistor",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "swf7n65m.kicad_sym",-    "swf7n65m.kicad_mod",-    "swf7n65m.glb",-    "swf7n65m.step",-    "swf7n65m.lbr",-    "docs/hero.png",-    "docs/swf7n65m-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "swf7n65m-hero.glb",-    "swf7n65m-hero.overlay.json"-  ],   "component": {     "mpn": "SWF7N65M",     "manufacturer": "Samwin",@@ -138,10 +121,319 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "Samwin",+      "Package": "TO-220F",+      "Category": "Triode/MOS Tube/Transistor",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "48975d56086855cea86e778363beda5d2c2c7706cf46010c2b881b279eb15664",+      "rows": [+        {+          "name": "Drain to source voltage",+          "symbol": "VDSS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 650,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous drain current (@TC=25oC)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 7,+          "conditions": "@TC=25oC; drain current limited by junction temperature",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous drain current (@TC=100oC)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 4.4,+          "conditions": "@TC=100oC; drain current limited by junction temperature",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain current pulsed (note 1)",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 28,+          "conditions": "note 1",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate to source voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single pulsed avalanche energy (note 2)",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 392,+          "conditions": "note 2",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Repetitive avalanche energy (note 1)",+          "symbol": "EAR",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "note 1",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Peak diode recovery dv/dt (note 3)",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "note 3",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating junction temperature & storage temperature",+          "symbol": "TSTG, TJ",+          "kind": "absolute_maximum",+          "unit": "oC",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum lead temperature for soldering purpose",+          "symbol": "TL",+          "kind": "absolute_maximum",+          "unit": "oC",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "1/8 from case for 5 seconds",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain to source breakdown voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 650,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V, ID=250uA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain to source leakage current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "uA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDS=650V, VGS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain to source leakage current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "uA",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VDS=520V, TJ=125oC",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate to source leakage current, forward",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VGS=30V, VDS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate to source leakage current, reverse",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": -100,+          "conditions": "VGS=-30V, VDS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate threshold voltage",+          "symbol": "VGS(TH)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 4,+          "conditions": "VDS=VGS, ID=250uA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain to source on state resistance",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 1.2,+          "max": 1.38,+          "conditions": "VGS=10V, ID=3.5A, TJ=25oC",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain to source on state resistance",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": null,+          "max": 2.2,+          "conditions": "VGS=10V, ID=3.5A, TJ=125oC",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Continuous source current",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 7,+          "conditions": "Integral reverse p-n junction diode in the MOSFET",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Pulsed source current",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 28,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode forward voltage drop",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.4,+          "conditions": "IS=7A, VGS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Reverse recovery time",+          "symbol": "trr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": null,+          "max": 440,+          "conditions": "IS=7A, VGS=0V, dIF/dt=100A/us",+          "source_page": 2,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "swf7n65m"+  ],+  "discovery_pitch": "SWF7N65M (Samwin) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "swf7n65m.kicad_sym",+    "swf7n65m.kicad_mod",+    "swf7n65m.glb",+    "swf7n65m.step",+    "swf7n65m.lbr",+    "docs/hero.png",+    "docs/swf7n65m-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "swf7n65m-hero.glb",+    "swf7n65m-hero.overlay.json"+  ]+}