← Commit history

svs20n60fjd2: factory component page (tier=lcsc)

Ray ·ae4c176c5f ·24d ago ·parent 2f3ca92
1 file changed +318−26
page.json+318−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "svs20n60fjd2",+  "title": "SVS20N60FJD2",+  "brief": "Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "svs20n60fjd2.kicad_sym",-    "svs20n60fjd2.kicad_mod",-    "svs20n60fjd2.glb",-    "svs20n60fjd2.step",-    "svs20n60fjd2.lbr",-    "docs/hero.png",-    "docs/svs20n60fjd2-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "svs20n60fjd2-hero.glb",-    "svs20n60fjd2-hero.overlay.json"-  ],   "component": {     "mpn": "SVS20N60FJD2",     "manufacturer": "Hangzhou Silan Microelectronics",@@ -138,10 +121,319 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "Hangzhou Silan Microelectronics",+      "Package": "TO-220F-3",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "8fa100e00282c0b2f57be76824812aaefc8e7eeb8e48c37509a9c105e913faf7",+      "rows": [+        {+          "name": "Drain-source voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 600,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-source voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 20,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 12,+          "conditions": "TC=100°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain pulse current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 80,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Power dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 45,+          "conditions": "TC=25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Power dissipation derating",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W/C",+          "min": null,+          "typ": null,+          "max": 0.36,+          "conditions": "derate above 25°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 967,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Body diode dv/dt ruggedness",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "MOSFET dv/dt ruggedness",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Operating junction temperature range",+          "symbol": "TJ",+          "kind": "absolute_maximum",+          "unit": "C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature range",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance junction-to-case",+          "symbol": "RθJC",+          "kind": "thermal",+          "unit": "C/W",+          "min": null,+          "typ": null,+          "max": 2.78,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance junction-to-ambient",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "C/W",+          "min": null,+          "typ": null,+          "max": 62.5,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 600,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V, ID=250µA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain-source leakage current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "VDS=600V, VGS=0V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate-source leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS=±30V, VDS=0V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate threshold voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 4,+          "conditions": "VGS=VDS, ID=250µA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Static drain-source on-resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.16,+          "max": 0.19,+          "conditions": "VGS=10V, ID=10A, Tj=25C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Continuous source current",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 20,+          "conditions": "MOS管中源极、漏极构成的反偏 P-N结",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Source pulse current",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 80,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Diode forward voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.2,+          "conditions": "IS=20A, VGS=0V",+          "source_page": 3,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "svs20n60fjd2"+  ],+  "discovery_pitch": "SVS20N60FJD2 (Hangzhou Silan Microelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "svs20n60fjd2.kicad_sym",+    "svs20n60fjd2.kicad_mod",+    "svs20n60fjd2.glb",+    "svs20n60fjd2.step",+    "svs20n60fjd2.lbr",+    "docs/hero.png",+    "docs/svs20n60fjd2-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "svs20n60fjd2-hero.glb",+    "svs20n60fjd2-hero.overlay.json"+  ]+}