← Commit history

svf7n65f: factory component page (tier=lcsc)

Ray ·f35bd754c7 ·17d ago ·parent 7593a13
1 file changed +318−26
page.json+318−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "svf7n65f",+  "title": "SVF7N65F",+  "brief": "Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "svf7n65f.kicad_sym",-    "svf7n65f.kicad_mod",-    "svf7n65f.glb",-    "svf7n65f.step",-    "svf7n65f.lbr",-    "docs/hero.png",-    "docs/svf7n65f-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "svf7n65f-hero.glb",-    "svf7n65f-hero.overlay.json"-  ],   "component": {     "mpn": "SVF7N65F",     "manufacturer": "Hangzhou Silan Microelectronics",@@ -138,10 +121,319 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "Hangzhou Silan Microelectronics",+      "Package": "TO-220F-3",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "767913f492042958945f19956e5c374a9735e999fa26ecb1999c1cbc73db3672",+      "rows": [+        {+          "name": "Drain-Source Breakdown Voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 650,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V, ID=250µA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Leakage Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDS=650V, VGS=0V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Leakage Current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS=±30V, VDS=0V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 4,+          "conditions": "VGS= VDS, ID=250µA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Static Drain-Source On State Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 1.1,+          "max": 1.4,+          "conditions": "VGS=10V, ID=3.5A",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Continuous Source Current",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 7,+          "conditions": "Integral Reverse P-N Junction Diode in the MOSFET",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Source Current",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 28,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.4,+          "conditions": "IS=7.0A, VGS=0V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 650,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain Current (continuous)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 7,+          "conditions": "TC = 25C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain Current (continuous)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 4.4,+          "conditions": "TC = 100C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain Current Pulsed",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 28,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 46,+          "conditions": "TC=25C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Power Dissipation derating",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W/C",+          "min": null,+          "typ": null,+          "max": 0.37,+          "conditions": "Derate above 25C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Single Pulsed Avalanche Energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 435,+          "conditions": "Note 1: L=30mH, IAS=5.0A, VDD=100V, RG=25, TJ=25C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Reverse Diode dv/dt",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 4.5,+          "conditions": "Note 2: VDS=0~400V, ISD<=10A, TJ=25C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "MOSFET dv/dt Ruggedness",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "Note 3: VDS=0~480V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Operation Junction Temperature Range",+          "symbol": "TJ",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Storage Temperature Range",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Case",+          "symbol": "RθJC",+          "kind": "thermal",+          "unit": "C/W",+          "min": null,+          "typ": 2.7,+          "max": null,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "C/W",+          "min": null,+          "typ": 62.5,+          "max": null,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "svf7n65f"+  ],+  "discovery_pitch": "SVF7N65F (Hangzhou Silan Microelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "svf7n65f.kicad_sym",+    "svf7n65f.kicad_mod",+    "svf7n65f.glb",+    "svf7n65f.step",+    "svf7n65f.lbr",+    "docs/hero.png",+    "docs/svf7n65f-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "svf7n65f-hero.glb",+    "svf7n65f-hero.overlay.json"+  ]+}