component
SUD20N10-66L-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+98−8@@ -1,13 +1,108 @@ {+ "schema_version": 1,+ "type": "component", "slug": "sud20n10-66l-t1-ge3-vb",+ "title": "SUD20N10-66L-T1-GE3-VB",+ "brief": "VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "sud20n10-66l-t1-ge3-vb" ],+ "component": {+ "mpn": "SUD20N10-66L-T1-GE3-VB",+ "manufacturer": "VBsemi Elec",+ "package": "TO-252",+ "pin_count": 4,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602988750309896192",+ "parts": {+ "symbol": "sud20n10-66l-t1-ge3-vb.kicad_sym",+ "footprint": "sud20n10-66l-t1-ge3-vb.kicad_mod",+ "model_3d": "sud20n10-66l-t1-ge3-vb.glb",+ "model_3d_step": "sud20n10-66l-t1-ge3-vb.step",+ "lbr": "sud20n10-66l-t1-ge3-vb.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate. Insulated gate terminal controlling drain-source channel conduction. Absolute maximum VGS = \u00b120 V; typical VGS(th) = 1.0-3.5 V; drive at VGS = 10 V for full enhancement (RDS(on) = 0.114 \u03a9 typ)."+ },+ {+ "number": "2",+ "name": "D",+ "type": "passive",+ "description": "Drain. Also electrically connected to the exposed tab of the TO-252 package for thermal dissipation. Rated VDS = 100 V, ID = 15 A continuous (TC = 25 \u00b0C), pulsed IDM = 40 A."+ },+ {+ "number": "3",+ "name": "S",+ "type": "passive",+ "description": "Source. Reference terminal for the MOSFET; internal body diode anode with VSD = 0.9 V typ at IF = 3 A. Continuous source (diode conduction) current IS = 3 A."+ },+ {+ "number": "4",+ "name": "D (Tab)",+ "type": "passive",+ "description": "Exposed thermal tab, internally connected to Drain. Provides low junction-to-case thermal resistance (RthJC = 0.85 \u00b0C/W typ) and is intended to be soldered to a copper heatsink pad."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602988750309896192",+ "pages": null,+ "sha256": "5bf54a19405d25f6",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 4,+ "described": 4,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "VBsemi Elec",+ "Package": "TO-252",+ "Category": "Transistors/Thyristors",+ "Pins": "4"+ }+ },+ "variants": [+ {+ "mpn": "SUD20N10-66L-T1-GE3-VB",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "sud20n10-66l-t1-ge3-vb"+ ],+ "discovery_pitch": "SUD20N10-66L-T1-GE3-VB (VBsemi Elec) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +120,5 @@ "docs/sud20n10-66l-t1-ge3-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }