component
STP80N240K6
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stp80n240k6: specified limits as data (metadata.characteristics, 41 rows from the datasheet)
2 files changed
+548−1
README.md+48@@ -21,6 +21,54 @@ STP80N240K6 from STMicroelectronics, in a TO-220. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -30 | | 30 | V | | 2 |+| Drain current (continuous) | ID | | | 16 | A | TC = 25 °C | 2 |+| Drain current (continuous) | ID | | | 10 | A | TC = 100 °C | 2 |+| Drain current (pulsed) | IDM | | | 35 | A | Pulse width limited by safe operating area | 2 |+| Total power dissipation | PTOT | | | 140 | W | TC = 25 °C | 2 |+| Peak diode recovery voltage slope | dv/dt(2) | | | 5 | V/ns | ISD ≤ 4 A; VDS (peak) = 400 V | 2 |+| Peak diode recovery current slope | di/dt(2) | | | 100 | A/µs | ISD ≤ 4 A; VDS (peak) = 400 V | 2 |+| MOSFET dv/dt ruggedness | dv/dt(3) | | | 120 | V/ns | VDS ≤ 640 V | 2 |+| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |+| Operating junction temperature range | TJ | -55 | | 150 | °C | | 2 |+| Avalanche current, repetitive or not repetitive | IAR | | | 3.3 | A | pulse width limited by TJ max. | 2 |+| Single pulse avalanche energy | EAS | | | 200 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 |+| Thermal resistance, junction-to-case | RthJC | | | 0.89 | °C/W | | 2 |+| Thermal resistance, junction-to-ambient | RthJA | | | 62.5 | °C/W | | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 800 | | | V | VGS = 0 V, ID = 1 mA | 3 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 800 V | 3 |+| Zero gate voltage drain current | IDSS | | | 50 | µA | VGS = 0 V, VDS = 800 V, TC = 125 °C | 3 |+| Gate body leakage current | IGSS | -1 | | 1 | µA | VDS = 0 V, VGS = ±20 V | 3 |+| Gate threshold voltage | VGS(th) | 3 | 3.5 | 4 | V | VDS = VGS, ID = 100 µA | 3 |+| Static drain-source on-resistance | RDS(on) | | 197 | 220 | mΩ | VGS = 10 V, ID = 7 A | 3 |+| Input capacitance | Ciss | | 1350 | | pF | VDS = 400 V, f = 1 MHz, VGS = 0 V | 3 |+| Output capacitance | Coss | | 20 | | pF | VDS = 400 V, f = 1 MHz, VGS = 0 V | 3 |+| Equivalent capacitance energy related | Co(er)(1) | | 25 | | pF | VDS = 0 to 640 V, VGS = 0 V | 3 |+| Equivalent capacitance time related | Co(tr)(2) | | 139 | | pF | VDS = 0 to 640 V, VGS = 0 V | 3 |+| Intrinsic gate resistance | RG | | 1.8 | | Ω | f = 1 MHz, ID = 0 A | 3 |+| Total gate charge | Qg | | 25.9 | | nC | VDD = 640 V, ID = 7 A, VGS = 0 to 10 V | 3 |+| Gate-source charge | Qgs | | 6.9 | | nC | VDD = 640 V, ID = 7 A, VGS = 0 to 10 V | 3 |+| Gate-drain charge | Qgd | | 8.4 | | nC | VDD = 640 V, ID = 7 A, VGS = 0 to 10 V | 3 |+| Turn-on delay time | td(on) | | 16 | | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Rise time | tr | | 5.3 | | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Turn-off delay time | td(off) | | 47.8 | | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Fall time | tf | | 12 | | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Source-drain current | ISD | | | 16 | A | | 4 |+| Source-drain current (pulsed) | ISDM(1) | | | 35 | A | | 4 |+| Forward on voltage | VSD(2) | | | 1.5 | V | ISD = 14 A, VGS = 0 V | 4 |+| Reverse recovery time | trr | | | 335 | ns | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery charge | Qrr | | | 5.4 | µC | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery current | IRRM | | | 27.5 | A | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery time | trr | | | 430 | ns | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+| Reverse recovery charge | Qrr | | | 7.4 | µC | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+| Reverse recovery current | IRRM | | | 28 | A | ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 4 |+ ## CAD (KiCad official) - Symbol: `STP80N240K6`
page.json+500−1@@ -150,6 +150,505 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9f1cfb42fd8c48bb",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 140,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt(2)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "ISD ≤ 4 A; VDS (peak) = 400 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery current slope",+ "symbol": "di/dt(2)",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "ISD ≤ 4 A; VDS (peak) = 400 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt(3)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "VDS ≤ 640 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.3,+ "conditions": "pulse width limited by TJ max.",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "starting TJ = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.89,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 800,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 800 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = 800 V, TC = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -1,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": 3.5,+ "max": 4,+ "conditions": "VDS = VGS, ID = 100 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 197,+ "max": 220,+ "conditions": "VGS = 10 V, ID = 7 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1350,+ "max": null,+ "conditions": "VDS = 400 V, f = 1 MHz, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "VDS = 400 V, f = 1 MHz, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Equivalent capacitance energy related",+ "symbol": "Co(er)(1)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 25,+ "max": null,+ "conditions": "VDS = 0 to 640 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Equivalent capacitance time related",+ "symbol": "Co(tr)(2)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 139,+ "max": null,+ "conditions": "VDS = 0 to 640 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Intrinsic gate resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.8,+ "max": null,+ "conditions": "f = 1 MHz, ID = 0 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 25.9,+ "max": null,+ "conditions": "VDD = 640 V, ID = 7 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 6.9,+ "max": null,+ "conditions": "VDD = 640 V, ID = 7 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 8.4,+ "max": null,+ "conditions": "VDD = 640 V, ID = 7 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 5.3,+ "max": null,+ "conditions": "VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 47.8,+ "max": null,+ "conditions": "VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM(1)",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD(2)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "ISD = 14 A, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 335,+ "conditions": "ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": null,+ "max": 5.4,+ "conditions": "ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 27.5,+ "conditions": "ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 430,+ "conditions": "ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": null,+ "max": 7.4,+ "conditions": "ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 28,+ "conditions": "ISD = 14 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +690,4 @@ "visibility": { "public": true }-}+}