component
STP24N60M2
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -53,19 +53,19 @@ "number": "1", "name": "Gate", "type": "input",- "description": "Gate control terminal; gate-source voltage range \u00b125 V, gate threshold voltage VGS(th) = 2-4 V at ID = 250 \u00b5A, VDS = VGS."+ "description": "Gate control terminal; gate-source voltage range ±25 V, gate threshold voltage VGS(th) = 2-4 V at ID = 250 µA, VDS = VGS." }, { "number": "2", "name": "Drain", "type": "output",- "description": "Drain power terminal; continuous current 18 A at TC = 25 \u00b0C, 12 A at TC = 100 \u00b0C; drain-source breakdown voltage V(BR)DSS = 600 V; typical on-resistance RDS(on) = 0.168 \u03a9 at VGS = 10 V, ID = 9 A; connected to TAB for thermal dissipation."+ "description": "Drain power terminal; continuous current 18 A at TC = 25 °C, 12 A at TC = 100 °C; drain-source breakdown voltage V(BR)DSS = 600 V; typical on-resistance RDS(on) = 0.168 Ω at VGS = 10 V, ID = 9 A; connected to TAB for thermal dissipation." }, { "number": "3", "name": "Source", "type": "power_in",- "description": "Source ground reference terminal; integral body diode with forward voltage VSD = 1.6 V at ISD = 18 A, reverse recovery time trr = 332 ns at Tj = 25 \u00b0C."+ "description": "Source ground reference terminal; integral body diode with forward voltage VSD = 1.6 V at ISD = 18 A, reverse recovery time trr = 332 ns at Tj = 25 °C." } ], "provenance": {@@ -143,5 +143,8 @@ "docs/stp24n60m2-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }