component
STP160N75F3
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -54,19 +54,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate control input; gate threshold VGS(th) = 2-4 V (VDS=VGS, ID=250 \u00b5A); maximum VGS = \u00b120 V; gate-body leakage IGSS = \u00b1200 nA max at VGS=\u00b120 V."+ "description": "Gate control input; gate threshold VGS(th) = 2-4 V (VDS=VGS, ID=250 µA); maximum VGS = ±20 V; gate-body leakage IGSS = ±200 nA max at VGS=±20 V." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain; VDSS = 75 V (VGS=0); continuous drain current ID = 120 A at TC=25 \u00b0C (package limited); pulsed IDM = 480 A; RDS(on) max 4 m\u03a9 at VGS=10 V, ID=60 A (TO-220)."+ "description": "Drain; VDSS = 75 V (VGS=0); continuous drain current ID = 120 A at TC=25 °C (package limited); pulsed IDM = 480 A; RDS(on) max 4 mΩ at VGS=10 V, ID=60 A (TO-220)." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source; body-diode rated ISD = 120 A continuous, ISDM = 480 A pulsed; forward diode voltage VSD = 1.5 V max at ISD=120 A, VGS=0; reverse recovery time trr = 70 ns at ISD=120 A, di/dt=100 A/\u00b5s."+ "description": "Source; body-diode rated ISD = 120 A continuous, ISDM = 480 A pulsed; forward diode voltage VSD = 1.5 V max at ISD=120 A, VGS=0; reverse recovery time trr = 70 ns at ISD=120 A, di/dt=100 A/µs." } ], "provenance": {@@ -146,5 +146,8 @@ "docs/stp160n75f3-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }