component
STP140NF75
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -53,19 +53,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate input; VGS = \u00b120 V max, VGS(th) = 2-4 V at VDS = VGS, ID = 250 \u00b5A; total gate charge Qg = 160 nC (typ) at VDD = 60 V, ID = 120 A, VGS = 10 V."+ "description": "Gate input; VGS = ±20 V max, VGS(th) = 2-4 V at VDS = VGS, ID = 250 µA; total gate charge Qg = 160 nC (typ) at VDD = 60 V, ID = 120 A, VGS = 10 V." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain; electrically connected to mounting tab; VDSS = 75 V, ID = 120 A continuous (TC = 25 \u00b0C) / 100 A (TC = 100 \u00b0C), IDM = 480 A pulsed, RDS(on) = 0.0065 \u03a9 (typ) / 0.0075 \u03a9 (max) at VGS = 10 V, ID = 70 A."+ "description": "Drain; electrically connected to mounting tab; VDSS = 75 V, ID = 120 A continuous (TC = 25 °C) / 100 A (TC = 100 °C), IDM = 480 A pulsed, RDS(on) = 0.0065 Ω (typ) / 0.0075 Ω (max) at VGS = 10 V, ID = 70 A." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source; integral body diode rated ISD = 120 A continuous, ISDM = 480 A pulsed, VSD = 1.5 V max at ISD = 120 A, VGS = 0; reverse recovery time trr = 115 ns at ISD = 120 A, di/dt = 100 A/\u00b5s, Tj = 150 \u00b0C."+ "description": "Source; integral body diode rated ISD = 120 A continuous, ISDM = 480 A pulsed, VSD = 1.5 V max at ISD = 120 A, VGS = 0; reverse recovery time trr = 115 ns at ISD = 120 A, di/dt = 100 A/µs, Tj = 150 °C." } ], "provenance": {@@ -145,5 +145,8 @@ "docs/stp140nf75-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }