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stl60n32n3ll-vb: factory component page (tier=lcsc)

Ray ·4ad5feb729 ·1mo ago ·parent 0d04c69
1 file changed +123−8
page.json+123−8
@@ -1,13 +1,133 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "stl60n32n3ll-vb",+  "title": "STL60N32N3LL-VB",+  "brief": "VBsemi Elec MOSFETs, DFN5x6-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "VBsemi Elec MOSFETs, DFN5x6-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "stl60n32n3ll-vb"   ],+  "component": {+    "mpn": "STL60N32N3LL-VB",+    "manufacturer": "VBsemi Elec",+    "package": "DFN5x6-8",+    "pin_count": 9,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604413219969134592",+    "parts": {+      "symbol": "stl60n32n3ll-vb.kicad_sym",+      "footprint": "stl60n32n3ll-vb.kicad_mod",+      "model_3d": "stl60n32n3ll-vb.glb",+      "model_3d_step": "stl60n32n3ll-vb.step",+      "lbr": "stl60n32n3ll-vb.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G1",+        "type": "input",+        "description": "Gate of MOSFET Q1 (high-side FET in the half-bridge). VGS(th) typ 1.0-2.5 V, VGS abs max \u00b120 V. Drives the top FET whose source is the PHASE (S1/D2) node."+      },+      {+        "number": "2",+        "name": "D1",+        "type": "passive",+        "description": "Drain of MOSFET Q1 (high-side). Pins 2, 3 and 4 are ganged together as the D1 lead. Typically tied to the input supply rail (VIN) in a synchronous-buck power stage."+      },+      {+        "number": "3",+        "name": "D1",+        "type": "passive",+        "description": "Drain of MOSFET Q1 (high-side), ganged with pins 2 and 4. Multiple pins are provided to reduce lead resistance/inductance and to spread current/heat."+      },+      {+        "number": "4",+        "name": "D1",+        "type": "passive",+        "description": "Drain of MOSFET Q1 (high-side), ganged with pins 2 and 3."+      },+      {+        "number": "5",+        "name": "S2",+        "type": "passive",+        "description": "Source of MOSFET Q2 (low-side FET in the half-bridge). Pins 5, 6 and 7 are ganged together as the S2 lead. Typically tied to PGND in a synchronous-buck power stage."+      },+      {+        "number": "6",+        "name": "S2",+        "type": "passive",+        "description": "Source of MOSFET Q2 (low-side), ganged with pins 5 and 7. Multiple pins reduce lead resistance/inductance."+      },+      {+        "number": "7",+        "name": "S2",+        "type": "passive",+        "description": "Source of MOSFET Q2 (low-side), ganged with pins 5 and 6."+      },+      {+        "number": "8",+        "name": "G2",+        "type": "input",+        "description": "Gate of MOSFET Q2 (low-side FET in the half-bridge). VGS(th) typ 1.0-2.5 V, VGS abs max \u00b120 V."+      },+      {+        "number": "9",+        "name": "S1/D2",+        "type": "passive",+        "description": "Exposed thermal/electrical pad - internally tied source of Q1 to drain of Q2, forming the switch (PHASE / SW / LX) node of the half-bridge. Carries the full switched load current; must be soldered to a large copper area both for the electrical connection and for heat sinking."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604413219969134592",+        "pages": null,+        "sha256": "9ccdbe6791781a25",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 9,+        "described": 9,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "VBsemi Elec",+      "Package": "DFN5x6-8",+      "Category": "Transistors/Thyristors",+      "Pins": "9"+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "stl60n32n3ll-vb"+  ],+  "discovery_pitch": "STL60N32N3LL-VB (VBsemi Elec) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +145,5 @@     "docs/stl60n32n3ll-vb-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file