component
STGB3NC120HDT4
Public Made by Adomby adom
STMicroelectronics IGBT Transistors / Modules, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+39@@ -0,0 +1,39 @@+# STGB3NC120HDT4++**STMicroelectronics** · IGBT Transistors / Modules · D2PAK++STGB3NC120HDT4 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate control input with ±20 V maximum gate-emitter voltage per Table 1, page 2. |+| 2 | C | passive | Collector main power terminal with 1200 V maximum collector-emitter voltage, 14 A continuous collector current at 25°C, and mechanical connection to thermal TAB per Table 1, page 2. |+| 3 | E | power_in | Emitter terminal and reference point for gate-emitter and collector-emitter voltage measurements; provides main current return path per Table 1, page 2. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | STMicroelectronics |+| Package | D2PAK |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `STGB3NC120HDT4`+- Footprint: `Package_TO_SOT_SMD:TO-263-2`+- 3D model: D2PAK (KiCad packages3D, STEP)+- 3D model files: `stgb3nc120hdt4-etched.step` / `stgb3nc120hdt4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgb3nc120hdt4.step` / `stgb3nc120hdt4.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stgb3nc120hdt4.pdf) (20 pp, sha256 `79ca9206aa12beb3`, retrieved 2026-09-22, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/stgb3nc120hdt4-datasheet.pdf)
page.jsonadded+111@@ -0,0 +1,111 @@+{+ "slug": "stgb3nc120hdt4",+ "version": "0.1.0",+ "type": "component",+ "description": "STMicroelectronics IGBT Transistors / Modules, D2PAK. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "transistors-thyristors",+ "stgb3nc120hdt4",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "stgb3nc120hdt4.kicad_sym",+ "stgb3nc120hdt4.kicad_mod",+ "stgb3nc120hdt4.glb",+ "stgb3nc120hdt4.step",+ "stgb3nc120hdt4.lbr",+ "docs/hero.png",+ "docs/stgb3nc120hdt4-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html"+ ],+ "component": {+ "mpn": "STGB3NC120HDT4",+ "manufacturer": "STMicroelectronics",+ "package": "D2PAK",+ "pin_count": 3,+ "category": "Transistors/Thyristors",+ "subcategory": "IGBT Transistors / Modules",+ "datasheet": "https://www.st.com/resource/en/datasheet/stgb3nc120hdt4.pdf",+ "parts": {+ "symbol": "stgb3nc120hdt4.kicad_sym",+ "footprint": "stgb3nc120hdt4.kicad_mod",+ "model_3d": "stgb3nc120hdt4-etched.glb",+ "model_3d_plain": "stgb3nc120hdt4.glb",+ "model_3d_step": "stgb3nc120hdt4-etched.step",+ "model_3d_step_plain": "stgb3nc120hdt4.step",+ "lbr": "stgb3nc120hdt4.lbr"+ },+ "distributor_links": {+ "lcsc": "C377954"+ },+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate control input with ±20 V maximum gate-emitter voltage per Table 1, page 2."+ },+ {+ "number": "2",+ "name": "C",+ "type": "passive",+ "description": "Collector main power terminal with 1200 V maximum collector-emitter voltage, 14 A continuous collector current at 25°C, and mechanical connection to thermal TAB per Table 1, page 2."+ },+ {+ "number": "3",+ "name": "E",+ "type": "power_in",+ "description": "Emitter terminal and reference point for gate-emitter and collector-emitter voltage measurements; provides main current return path per Table 1, page 2."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.2",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.2",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-4-6",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [],+ "pages_sent": 20,+ "cost_usd": 0.1459,+ "at": "2026-09-22T09:59:17"+ },+ "datasheet": {+ "url": "https://www.st.com/resource/en/datasheet/stgb3nc120hdt4.pdf",+ "pages": 20,+ "sha256": "79ca9206aa12beb3",+ "source_tier": "mfr"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}