← Commit history

stf15nm65n: factory component page (tier=mfr)

Ray ·d0da511a8d ·16d ago ·parent d5c57eb
1 file changed +390−26
page.json+390−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "stf15nm65n",+  "title": "STF15NM65N",+  "brief": "STMicroelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "STMicroelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "stf15nm65n.kicad_sym",-    "stf15nm65n.kicad_mod",-    "stf15nm65n.glb",-    "stf15nm65n.step",-    "stf15nm65n.lbr",-    "docs/hero.png",-    "docs/stf15nm65n-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "stf15nm65n-hero.glb",-    "stf15nm65n-hero.overlay.json"-  ],   "component": {     "mpn": "STF15NM65N",     "manufacturer": "STMicroelectronics",@@ -143,10 +126,391 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "STMicroelectronics",+      "Package": "TO-220F-3",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "fddcc01c1e4c34235fafd0dc88b1a0a807e71d39f759287bade8a1f9149a9ae1",+      "rows": [+        {+          "name": "Drain source voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 650,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate source voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -25,+          "typ": null,+          "max": 25,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain current continuous",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 12,+          "conditions": "Tc = 25 °C; limited by maximum junction temperature",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain current continuous",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 7.56,+          "conditions": "Tc = 100 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain current pulsed",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 48,+          "conditions": "Pulse width limited by safe operating area",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Total dissipation",+          "symbol": "PTOT",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "Tc = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Peak diode recovery voltage slope",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "ISD ≤12 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80 % V(BR)DSS",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Insulation withstand voltage (RMS from all three leads to external heatsink)",+          "symbol": "VISO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 2500,+          "conditions": "t = 1 s; TC = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Operating junction temperature range",+          "symbol": "TJ",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Avalanche current, repetitive or non-repetitive",+          "symbol": "IAS",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 3,+          "conditions": "Pulse width limited by Tjmax",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 187,+          "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance junction-case",+          "symbol": "Rthjc",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 4.17,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance junction-ambient",+          "symbol": "Rthj-amb",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 62.5,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 650,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0, ID = 1 mA",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDD = 650 V, VGS = 0",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VDD = 650 V, VGS = 0, TC = 125 °C (defined by design, not subject to production test)",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate body leakage",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS = ±25 V, VDS = 0 V",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate threshold voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": 3,+          "max": 4,+          "conditions": "ID = 250 µA, VGS = VDS",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Static drain-source on-resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.35,+          "max": 0.38,+          "conditions": "ID = 6 A, VGS = 10 V",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Source drain current",+          "symbol": "ISD",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 12,+          "conditions": "",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Source drain current (pulsed)",+          "symbol": "ISDM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 48,+          "conditions": "Pulse width limited by safe operating area",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Forward on voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.6,+          "conditions": "ISD = 12 A, VGS = 0 V; pulsed: pulse duration = 300 µs, duty cycle 1.5 %",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Reverse recovery time",+          "symbol": "trr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": null,+          "max": 428,+          "conditions": "ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Reverse recovery charge",+          "symbol": "Qrr",+          "kind": "electrical",+          "unit": "µC",+          "min": null,+          "typ": null,+          "max": 4.7,+          "conditions": "ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Reverse recovery current",+          "symbol": "IRRM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 21.5,+          "conditions": "ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Reverse recovery time",+          "symbol": "trr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": null,+          "max": 570,+          "conditions": "ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Reverse recovery charge",+          "symbol": "Qrr",+          "kind": "electrical",+          "unit": "µC",+          "min": null,+          "typ": null,+          "max": 6.2,+          "conditions": "ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Reverse recovery current",+          "symbol": "IRRM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 22,+          "conditions": "ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+          "source_page": 5,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "stf15nm65n"+  ],+  "discovery_pitch": "STF15NM65N (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "stf15nm65n.kicad_sym",+    "stf15nm65n.kicad_mod",+    "stf15nm65n.glb",+    "stf15nm65n.step",+    "stf15nm65n.lbr",+    "docs/hero.png",+    "docs/stf15nm65n-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "stf15nm65n-hero.glb",+    "stf15nm65n-hero.overlay.json"+  ]+}