← Commit history

stf11n60dm2: factory component page (tier=mfr)

Ray ·5cb38e6cc2 ·14d ago ·parent 82a6419
1 file changed +330−26
page.json+330−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "stf11n60dm2",+  "title": "STF11N60DM2",+  "brief": "STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "stf11n60dm2.kicad_sym",-    "stf11n60dm2.kicad_mod",-    "stf11n60dm2.glb",-    "stf11n60dm2.step",-    "stf11n60dm2.lbr",-    "docs/hero.png",-    "docs/stf11n60dm2-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "stf11n60dm2-hero.glb",-    "stf11n60dm2-hero.overlay.json"-  ],   "component": {     "mpn": "STF11N60DM2",     "manufacturer": "STMicroelectronics",@@ -140,10 +123,331 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "STMicroelectronics",+      "Package": "TO-220FP",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "bf6379c4df6d1ff81f82831ed96ccf330cd6db6824bde702ca8b85b7f09bd7ca",+      "rows": [+        {+          "name": "Gate-source voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -25,+          "typ": null,+          "max": 25,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain current (continuous)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "Tcase = 25 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain current (continuous)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 6.3,+          "conditions": "Tcase = 100 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain current (pulsed)",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 40,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total power dissipation",+          "symbol": "PTOT",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 25,+          "conditions": "Tcase = 25 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Peak diode recovery voltage slope",+          "symbol": "dv/dt(2)",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "MOSFET dv/dt ruggedness",+          "symbol": "dv/dt(3)",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VDS ≤ 480 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Insulation withstand voltage (RMS)",+          "symbol": "VISO",+          "kind": "absolute_maximum",+          "unit": "kV",+          "min": null,+          "typ": null,+          "max": 2.5,+          "conditions": "from all three leads to external heat sink; t = 1 s; TC = 25 °C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature range",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance junction-case",+          "symbol": "Rthj-case",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance junction-ambient",+          "symbol": "Rthj-amb",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 62.5,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Avalanche current, repetitive or not repetitive",+          "symbol": "IAR",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 2.5,+          "conditions": "pulse width limited by Tjmax",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 250,+          "conditions": "starting Tj = 25 °C, ID = IAR, VDD = 50 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-source breakdown voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 600,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0 V, ID = 1 mA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 1.5,+          "conditions": "VGS = 0 V, VDS = 600 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Zero gate voltage drain current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VGS = 0 V, VDS = 600 V, Tcase = 125 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate-body leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": -5,+          "typ": null,+          "max": 5,+          "conditions": "VDS = 0 V, VGS = ±25 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate threshold voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 3,+          "typ": 4,+          "max": 5,+          "conditions": "VDS = VGS, ID = 250 µA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Static drain-source on-resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 370,+          "max": 420,+          "conditions": "VGS = 10 V, ID = 5 A",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Source-drain current",+          "symbol": "ISD",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Source-drain current (pulsed)",+          "symbol": "ISDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 40,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Forward on voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.6,+          "max": null,+          "conditions": "VGS = 0 V, ISD = 10 A",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate-source breakdown voltage",+          "symbol": "V(BR)GSO",+          "kind": "electrical",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "IGS = ±250 µA, ID = 0 A",+          "source_page": 4,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "stf11n60dm2"+  ],+  "discovery_pitch": "STF11N60DM2 (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "stf11n60dm2.kicad_sym",+    "stf11n60dm2.kicad_mod",+    "stf11n60dm2.glb",+    "stf11n60dm2.step",+    "stf11n60dm2.lbr",+    "docs/hero.png",+    "docs/stf11n60dm2-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "stf11n60dm2-hero.glb",+    "stf11n60dm2-hero.overlay.json"+  ]+}