component
STF100N10F7
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+293−27@@ -1,8 +1,11 @@ {+ "schema_version": 1,+ "type": "component", "slug": "stf100n10f7",+ "title": "STF100N10F7",+ "brief": "STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "triode-mos tube-transistor",@@ -10,26 +13,6 @@ "factory-2.0.0", "extractor-text" ],- "dependencies": {},- "hero": {- "type": "image",- "path": "docs/hero.png"- },- "files": [- "page.json",- "README.md",- "stf100n10f7.kicad_sym",- "stf100n10f7.kicad_mod",- "stf100n10f7.glb",- "stf100n10f7.step",- "stf100n10f7.lbr",- "docs/hero.png",- "docs/stf100n10f7-datasheet.pdf",- "viewers/symbol.html",- "viewers/footprint.html",- "stf100n10f7-hero.glb",- "stf100n10f7-hero.overlay.json"- ], "component": { "mpn": "STF100N10F7", "manufacturer": "STMicroelectronics",@@ -146,7 +129,7 @@ "D": { "nom_mm": 10.2, "range_mm": [- 10,+ 10.0, 10.4 ] },@@ -175,10 +158,293 @@ } } },- "visibility": "public",- "org": "adom",+ "metadata": {+ "specs": {+ "Manufacturer": "STMicroelectronics",+ "Package": "TO-220FP",+ "Category": "Triode/MOS Tube/Transistor",+ "Pins": "3"+ },+ "appearance": {+ "housing": {+ "quote": "Updated title and features on the cover page, Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal resistance and Table 5: On/off",+ "page": 28,+ "doc": "ds.pdf",+ "material": "Abs"+ },+ "version": 1,+ "datasheet_sha256": "a9b511a6619d701416eb4993683c4dabe687af99053d80f74e6f931f4db38def"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a9b511a6619d701416eb4993683c4dabe687af99053d80f74e6f931f4db38def",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "ID = 250 μA, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 100 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current at TC = 125 °C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 100 V, VGS = 0 V, TC = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 4.5,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.8,+ "max": 8,+ "conditions": "VGS = 10 V, ID = 40 A; 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